Semiconductor memory device

ABSTRACT

A semiconductor memory device comprises a memory string that includes a plurality of memory cells electrically connected in series, the memory cells including first to fourth memory cells, first to fourth word lines that are electrically connected to gates of the first to fourth memory cells, respectively, a voltage generation circuit configured to generate a first voltage, a first circuit configured to output the first voltage to one of first and second wires, a second circuit configured to connect the first and second wires to the first and second word lines, respectively, and a third circuit configured to connect the first and second wires to the third and fourth word lines, respectively.

CROSS-REFERENCE TO RELATED APPLICATION

This application is based upon and claims the benefit of priority fromJapanese Patent Application No. 2016-181994, filed Sep. 16, 2016, theentire contents of which are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a semiconductor memorydevice.

BACKGROUND

NAND flash memory is known as a semiconductor memory device.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram illustrating a semiconductor memory deviceaccording to a first embodiment.

FIG. 2 is a block diagram illustrating a plane that is included in thesemiconductor memory device according to the first embodiment.

FIG. 3 is a circuit diagram illustrating a memory cell array that isincluded in the semiconductor memory device according to the firstembodiment.

FIG. 4 is a cross-sectional diagram illustrating a memory cell arraythat is included in the semiconductor memory device according to thefirst embodiment.

FIG. 5 is a circuit diagram illustrating a row decoder that is includedin the semiconductor memory device according to the first embodiment.

FIG. 6 is a block diagram illustrating a WL selection circuit that isincluded in the semiconductor memory device according to the firstembodiment.

FIG. 7 is a block diagram illustrating a zone selection circuit, a chunkselection circuit, a lower layer WL selection circuit, and an upperlayer WL selection circuit that are included in the semiconductor memorydevice according to the first embodiment.

FIG. 8 is a block diagram illustrating the zone selection unit, thechunk selection unit, the lower layer WL selection unit, and the upperlayer WL selection unit that are included in the semiconductor memorydevice according to the first embodiment.

FIGS. 9-13 are circuit diagrams illustrating different switch circuitsincluded in the semiconductor memory device according to the firstembodiment.

FIG. 14 is a block diagram illustrating an SG selection circuit that isincluded in the semiconductor memory device according to the firstembodiment.

FIG. 15 is a diagram illustrating a relationship between a selected wordline and zone allocation in the semiconductor memory device according tothe first embodiment.

FIG. 16 is a block diagram illustrating a row driver control circuit anda row driver that are included in a semiconductor memory deviceaccording to a second embodiment.

FIG. 17 is a block diagram illustrating a selection driver that isincluded in the semiconductor memory device according to the secondembodiment.

FIGS. 18-20 are circuit diagrams illustrating different dedicateddrivers included in the semiconductor memory device according to thesecond embodiment.

FIG. 21 is a block diagram illustrating a CG selection circuit that isincluded in the semiconductor memory device according to the secondembodiment.

FIG. 22 is a table illustrating a relationship between a dedicateddriver, a level shifter, and a wire CG in the semiconductor memorydevice according to the second embodiment.

DETAILED DESCRIPTION

Embodiments provide a semiconductor memory device that is capable ofsuppressing an increase in a chip area.

According to an embodiment, there is provided a semiconductor memorydevice including a memory string that includes a plurality of memorycells electrically connected in series, the memory cells including firstto fourth memory cells, first to fourth word lines that are electricallyconnected to gates of the first to fourth memory cells, respectively, avoltage generation circuit configured to generate a first voltage, afirst circuit configured to output the first voltage to one of first andsecond wires, a second circuit configured to connect the first andsecond wires to the first and second word lines, respectively, and athird circuit configured to connect the first and second wires to thethird and fourth word lines, respectively.

Embodiments will be described below with reference to the drawings.Descriptions are provided with like elements being given like referencenumerals throughout the drawings.

1. First Embodiment

A semiconductor memory device according to a first embodiment isdescribed. A three-dimensional stacked NAND flash memory in which memorycell transistors are stacked up on a semiconductor substrate will bedescribed below as an example of a semiconductor memory device.

1.1 Configuration of the Entire Semiconductor Memory Device

First, a configuration of an entire semiconductor memory device isdescribed with reference to FIG. 1. Moreover, in the example in FIG. 1,for brevity, one portion of a wire (or a bus) that connects the blocksis shown.

FIG. 1 is a block diagram of the semiconductor memory device. A NANDflash memory 1, as illustrated, generally includes a core unit 10 and aperipheral circuit 20.

The core unit 10, for example, includes two planes PLN0 and PLN1. Theplanes PLNs (PLN0 and PLN1) each contain a memory cell array, rowselection circuits, and a sense amplifier. The planes PLN0 and PLN1 areable to operate independently of each other, and are also able tooperate at the same time. Moreover, the number of planes PLNs is notlimited to 2. The number of planes PLNs may be 1 and may be 3 orgreater. According to the present embodiment, the core unit 10 includestwo planes PLN and where the two planes PLN have the same configuration.The plane PLN0 and plane PLN1 are referred to as the “plane PLN” whenthey do not need to be distinguished from one another.

Each plane PLN includes a memory cell array 11, a first row selectioncircuit 12A, a second row selection circuit 12B, and a sense amplifier17. Alternatively, one sense amplifier 17 that is common to the planesPLN0 and PLN1 may be provided.

The memory cell array 11 includes a plurality of blocks each of which isa set of a plurality of nonvolatile memory cell transistors. The memorycell array 11 will be described in detail below.

The first row selection circuit 12A decodes address information ADD (forexample, a plane address, a chunk address, a block address, a pageaddress, or the like) for example, when performing writing, reading, anderasing operations, and selects a target wire (e.g., a word line and aselection gate line that will be described below) in the row direction.The second row selection circuit 12B also has the same configuration.The first row selection circuit 12A and the second row selection circuit12B are assigned to different blocks within a target memory cell array.

An example configuration of the page address is disclosed in U.S. patentapplication Ser. No. 13/784,753 filed on Mar. 4, 2013, which is entitled“NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND CONTROL METHOD THEREOF.”This patent application is incorporated by reference herein in itsentirety.

Based on the address information ADD (for example, column addressinformation), during the reading, the sense amplifier 17 senses datathat is read from the memory cell transistor to a bit line. During thewriting, the sense amplifier 17 transfers the data that is to be writtento the memory cell transistor.

The peripheral circuit 20 includes a control circuit 21, a voltagegeneration circuit 22, a row driver control circuit 23, a row driver 24,a PLN0 control circuit 25A, and a PLN1 control circuit 25B.

Based on a control signal SCD that is transmitted from the row drivercontrol circuit 23, the row driver 24 supplies a voltage from thevoltage generation circuit 22 to each of the first row selection circuit12A and the second row selection circuit 12B of each plane PLN. Thefirst row selection circuit 12A and the second row selection circuit 12Bare referred to as the “row selection circuit 12” when they do not needto be distinguished from one another

The row driver 24 includes a CG driver 50, a CGU driver 51, a UCG driver52, an SGD_SEL driver 53, an SGD_USEL driver 54, an SGS_SEL driver 55,an SGS_USEL driver 56, and a USG driver 57.

The CG driver 50 is connected to each row selection circuit 12 throughtwelve wires CG (CG<11:0>). The CG driver 50 supplies a voltage appliedto a plurality of word lines (12 word lines according to the presentembodiment) that include a selected word line in a selected group, forexample, in writing and reading operations. Moreover, the number ofwires CG that connect between the CG driver 50 and each row selectioncircuit 12 is not limited to twelve and may be smaller or greater inother embodiments.

The plurality of word lines to which the CG driver 50 supplies a voltageis described. For example, during the writing, if a word line WLi (i isan integer that is equal to or greater than 0) is selected, due tointerference with a selected word line WLi to which a high-voltageprogram voltage VPGM is applied, a likelihood that erroneous writingwill occur is higher in the memory cell transistor that corresponds tocertain non-selected word lines, e.g., WL (i−4) to WL (i+4) than in thememory cell transistor that is connected to different non-selected wordlines WL. For this reason, the CG driver 50 applies a suitable voltageto the plurality of (for example, 12) word lines WL that include wordlines, WL (i−4) to WL (i+4). Furthermore, during the reading, in thesame manner, the CG driver 50 applies a suitable voltage to theplurality of (for example, 12) word lines WL that include the wordlines, WL (i−4) to WL (i+4). The selected word line WLi, hereinafter, isexpressed simply as the “selected word line WL”.

More specifically, for example, during the writing, the CG driver 50 mayapply a voltage VPGM to the selected word line WLi, apply a voltageVPASS1 to a non-selected word line WL (i+1), apply a voltage VPASS2 to anon-selected word line WL (i−1), apply a voltage VPASS3 to non-selectedword lines WL (i+2), WL (i+3), WL (i−2), and WL (i−3), and apply avoltage VPASS to non-selected word lines WL (i+4), WL (i+5), and WL(i−4) to WL (i−6).

The voltage VPGM is a high voltage that is applied to a selected wordline WL when performing the writing to a selected page. The voltagesVPASS, and VPASS1 to VPASS3 are voltages that causes the memory celltransistor to be in an ON state without regard to a threshold voltage ofthe memory cell transistor. The voltages VPGM and the voltages VPASS andVPASS1 to VPASS3 have the relationship of VPGM >(VPASS, or VPASS1 toVPASS3). Moreover, the voltages VPASS and VPASS1 to VPASS3 may be thesame voltage or be different from one another. Additionally, anycombination of voltages may be applied to non-selected word lines WL.

The CGU driver 51 is connected to each row selection circuit 12 throughwires CGU(D) and CGU(S). For example, in writing and reading operations,the CGU driver 51 provides a voltage that is applied to the non-selectedword line WL within the selected block to which a voltage is notsupplied from the CG driver 50. According to the present embodiment, thewire CGU(D) corresponds to the non-selected word line WL that ispositioned on a layer above the selected word line WL, and the wireCGU(S) corresponds to the non-selected word line WL that is positionedon a layer below the selected word line WL. Moreover, voltages of thewire CGU(D) and the wire CGU(D) may be the same. The wires CGU(D) andCGU(S) are referred to as the “wire CGU(D/S)” when they do not need tobe distinguished from one another. In alternative embodiments, thenumber of wires CGUs may be 1 or be 3 or greater.

The UCG driver 52 is connected to each row selection circuit 12 througha wire UCG. The UCG driver 52 supplies a voltage that is to be appliedto a word line WL within a non-selected block, for example, in thewriting and reading operations. In alternative embodiments, the numberof wires UCG may be different, and different voltages may be applied toa plurality of wires UCG.

The SGD_SEL driver 53 is connected to each row selection circuit 12through a wire SGD_SEL. The SGD_SEL driver 53 supplies a voltage that isto be applied to a selection gate line SGD within the selected blockthat will be described below, for example, in the writing and readingoperations.

The SGD_USEL driver 54 is connected to each row selection circuit 12through a wire SGD_USEL. The SGD_USEL driver 54 supplies a voltage thatis to be applied to a non-selected gate line SGD within the selectedblock that will be described below, for example, in the writing andreading operations.

The SGS_SEL driver 55 is connected to each row selection circuit 12through a wire SGS_SEL. The SGS_SEL driver 55 supplies a voltage that isto be applied to a selection gate line SGS within the selected blockthat will be described below, for example, in the writing and readingoperations.

The SGS_USEL driver 56 is connected to row selection circuit 12 througha wire SGS_USEL. The SGS_USEL driver 56 supplies a voltage that is to beapplied to a non-selected gate line SGS within the selected block thatwill be described below, for example, in the writing and readingoperations.

The USG driver 57 is connected to each row selection circuit 12 througha wire USG. The USG driver 57 supplies a voltage that is to be appliedto the selection gate lined SGD and SGS within the non-selected blockthat will be described below, for example, in the writing and readingoperations.

Based on control by the control circuit 21 and the address informationADD (for example, the page address), the row driver control circuit 23controls the row driver 24 and the voltage generation circuit 22. Therow driver control circuit 23 transmits the control signal SCD to eachof the drivers 50 to 57 within the row driver 24, and controls thedrivers 50 to 57. More specifically, the row driver control circuit 23controls a voltage that is applied to the word lines WL and theselection gate lines SGD and SGS, and a timing at which the voltage isapplied. Additionally, based on the address information ADD, the rowdriver control circuit 23, for example, determines which voltage issupplied to which a wire CG. That is, the row driver control circuit 23determines the wire CG that corresponds to the selected word line WL.

Under the control of the control circuit 21 or the row driver controlcircuit 23, the voltage generation circuit 22 generates voltagesnecessary for writing, reading, and erasing data. For example, thevoltage generation circuit 22 supplies a voltage necessary for a wire(e.g., the word line WL and the selection gate lines SGD and SGS) in therow direction to each of the drivers 50 to 57 within the row driver 24.

Based on the control by the control circuit 21 and the addressinformation ADD (for example, the plane address, the chunk address, theblock address, the page address, or the like), the PLN0 control circuit25A controls each row selection circuit 12 within the plane PLN0. ThePLN0 control circuit 25A includes a first row control circuit 25A1 and asecond row control circuit 25A2.

The first row control circuit 25A1 transmits a control signal S_SW tothe first row selection circuit 12A in the plane PLN0, and controls thefirst row selection circuit 12A.

The second row control circuit 25A2 transmits the control signal S_SW tothe second row selection circuit 12B in the plane PLN0, and controls thesecond row selection circuit 12B.

The PLN1 control circuit 25B has the same configuration as the PLN0control circuit 25A, and controls each row selection circuit 12 withinthe plane PLN1. The PLN1 control circuit 25B includes a first rowcontrol circuit 25B1 and a second row control circuit 25B2.

The first row control circuit 25B1 transmits the control signal S_SW tothe first row selection circuit 12A in the plane PLN1 and controls thefirst row selection circuit 12A.

The second row control circuit 25B2 transmits the control signal S_SW tothe second row selection circuit 12B in the plane PLN1, and controls thesecond row selection circuit 12B.

In the manner described above, the control circuit 21 controls operationof the NAND flash memory 1.

1.2 Configuration of the Plane

Next, a configuration of the plane PLN is described with reference toFIG. 2. Although FIG. 2 illustrates the plane PLN0, the plane PLN1 alsohas the same configuration as well. Moreover, in the example of FIG. 2,a case is illustrated where 96 word lines WL0 to WL95 are connected toone block BLK and selection gate lines SGD0 to SGD3 and selection gatelines SGS0 to SGS3 are connected to string units SU0 to SU3,respectively.

The memory cell array 11, for example, includes 16 blocks BLKs (BLK0 toBLK15) each of which includes nonvolatile memory cell transistors thatare associated with a row and a column. Each block BLK, for example,includes four string units SU (SU0 to SU3). The number of blocks BLKwithin the memory cell array 11 and the number of string units SU withina block are not limited to 16 and 4, respectively. The block BLK will bedescribed in detail below.

The memory cell array 11 includes four chunks CNK (CNK0 to CNK4). Eachchunk CNK is a set of blocks BLK. In an example in FIG. 2, one chunk CNKincludes four blocks BLK. More specifically, the chunk CNK0 includesblocks BLK0, BLK2, BLK4, and BLK6. The chunk CNK1 includes blocks BLK1,BLK3, BLK5, and BLK7. The chunk CNK2 includes blocks BLK8, BLK10, BLK12,and BLK14. The chunk CNK3 includes blocks BLK9, BLK11, BLK13, and BLK15.The number of chunks CNK within the memory cell array 11 and the numberof and combinations of blocks BLK within one chunk CNK may be differentin other embodiments.

The first row selection circuit 12A supplies a voltage to the wire inthe row direction of the chunks CNK0 and CNK2. The first row selectioncircuit 12A includes a row decoder group 13A, a WL selection circuit14A, and an SG selection circuit 15A.

The row decoder group 13A includes a row decoder 13C0 that correspondsto the chunk CNK0, and a row decoder 13C2 that corresponds to the chunkCNK2.

The row decoder 13C0 decodes the address information ADD and selects anyone of the blocks BLK within the chunk CNK0. More specifically, if thechunk CNK0 is selected, the row decoder 13C0 electrically connects towires GWL0 to GWL 95, GSGD0 to GSGD3, and GSGS0 to GSGS3, and word linesWL0 to WL95, selection gate lines SGD0 to SGD3, and selection gate linesSGS0 to SGS3, which correspond to a selected block BLK.

The row decoder 13C2 has the same configuration as the row decoder 13C0,and corresponds to the chunk CNK2.

The WL selection circuit 14A supplies a voltage that is to be applied tothe word line WL in the selected block BLK, to the row decoder 13C0 or13C2, according to the control signal S_SW that is transmitted from thefirst row control circuit 25A1. More specifically, an input terminal ofthe WL selection circuit 14A is connected to the wires CG<11:0>, CGU(D/S), and UCG. An output terminal of the WL selection circuit 14A isconnected to the row decoder 13C0 through the wires GWL0 to GWL 95 thatcorrespond to the chunk CNK0, and is connected to the row decoder 13C2through other wires GWL0 to GWL 95 that correspond to the chunk CNK2.Then, if any one of the blocks BLK within the chunk CNK0 is selected,the WL selection circuit 14A outputs voltages of the wires CG<11:0> andCGU (D/S) to the row decoder 13C0 through the wires GWL0 to GWL95 thatcorrespond to the chunk CNK0. On the other hand, if any one of theblocks BLK within the chunk CNK2 is selected, the WL selection circuit14A outputs the voltages of the wires CG<11:0> and CGU(D/S) to the rowdecoder 13C2 through the wires GWL0 to GWL95 that correspond to thechunk CNK2.

The SG selection circuit 15A supplies a voltage that is applied to theselection gate lines SGD and SGS in the selected block BLK, to the rowdecoder 13C0 or 13C2 according to the control signal S_SW that istransmitted from the first row control circuit 25A1. More specifically,an input terminal of the SG selection circuit 15A is connected to thewires SGD_SEL, SGD_USEL, SGS_SEL, SGS_USEL, and USG. An output terminalof the SG selection circuit 15A is connected to the row decoder 13C0through the wires GSGD0 to GSGD3, and GSGS0 to GSGS3 that correspond tothe chunk CNK0, and is connected to the row decoder 13C2 through otherwires GSGD0 to GSGD3, and GSGS0 to GSGS3 that correspond to the chunkCNK2. Then, if any one of the blocks BLK within the chunk CNK0 isselected, the SG selection circuit 15A outputs voltages of the wiresSGD_SEL, SGD_USEL, SGS_SEL, and SGS_USEL to the row decoder 13C0 throughthe wires GSGD0 to GSGD3 and GSGS0 to GSGS3 that correspond to the chunkCNK0. On the other hand, if any one of the blocks BLK within the chunkCNK2 is selected, the SG selection circuit 15A outputs voltages of thewires SGD_SEL, SGD_USEL, SGS_SEL, and SGS_USEL to the row decoder 13C2through the wires GSGD0 to GSGD3 and GSGS0 to GSGS3 that correspond tothe chunk CNK2.

More specifically, for example, if the string unit SU0 in the block BLK0(the chunk CNK0) is selected, the SG selection circuit 15A outputs avoltage of the wire SGD_SEL to the row decoder 13C0 through the wireGSGD0, and outputs a voltage of the wire SGD_USEL to the row decoder13C0 through the wires GSGD1 to GSGD3. Furthermore, the SG selectioncircuit 15A outputs a voltage of the wire SGS_SEL to the row decoder13C0 through the wire GSGS0, and outputs a voltage of the wire SGS_USELto the row decoder 13C0 through the wires GSGS1 to GSGS3.

The second row selection circuit 12B has the same configuration as thefirst row selection circuit 12A, and supplies a voltage to the wire inthe row direction of the chunks CNK1 and CNK3. The second row selectioncircuit 12B includes a row decoder group 13B, a WL selection circuit14B, and an SG selection circuit 15B.

The row decoder group 13B has the same configuration as the row decodergroup 13A, and includes a row decoder 13C1 that corresponds to the chunkCNK1 and a row decoder 13C3 that corresponds to the chunk CNK3.

The row decoders 13C1 and 13C3 have the same configuration as the rowdecoders 13C0 and 13C2, and electrically connect to the wires GWL0 toGWL 95, GSGD0 to GSGD3, and GSGS0 to GSGS3, which are connected to thecorresponding chunk CNK, and the word lines WL0 to WL95, the selectiongate lines SGD0 to SGD3, and the selection gate lines SGS0 to SGS3,which correspond to the selected block BLK.

The WL selection circuit 14B has the same configuration as the WLselection circuit 14A, and supplies a voltage that is to be applied tothe word line WL in the selected block BLK, to the row decoder 13C1 or13C3, according to the control signal S_SW that is transmitted from thesecond row control circuit 25A2.

The SG selection circuit 15B has the same configuration as the SGselection circuit 15A, and supplies a voltage that is to be applied tothe selection gate lines SGD and SGS in the selected block BLK, to therow decoder 13C1 or 13C3, according to the control signal S_SW that istransmitted from the second row control circuit 25A2.

During the reading, the sense amplifier 17 senses data that is read to aplurality of bit lines BL (BL0 to BL(N−1) where N is an integer that isequal to or greater than 1). Furthermore, during the writing, the senseamplifier 17 transmits data that is to be written to the memory celltransistor through the bit line BL.

1.3 Configuration of the Memory Cell Array

Next, a configuration of the memory cell array 11 is described withreference to FIG. 3. In an example in FIG. 3, the block BLK0, and therow decoder 13C0 in the chunk CNK0 and the sense amplifier 17, whichcorrespond to the block BLK0 are shown. The same applies for otherblocks BLK.

The block BLK0 includes a plurality of NAND strings 16 to each of whichmemory cell transistors MT are connected in series. Each of the NANDstrings 16, for example, includes 96 memory cell transistors MT (MT0 toMT95), and selection transistors ST1 and ST2. The memory cell transistorMT includes a control gate and a charge storage layer, and retains datain a nonvolatile state. Moreover, the memory cell transistor MT may be aMONOS type that uses an insulating film in the charge storage layer, andmay be an FG type that uses a conductive film in the charge storagelayer. Additionally, the number of memory cell transistors MT is notlimited to 96, and may be 8, 16, 32, 64, 128, or some other number.

Electric current paths for the memory cell transistors MT0 to MT95 areconnected in series to one another. A drain of the memory celltransistor MT0 on the one end side of this series connection isconnected to a source of the selection transistor ST1, a source of thememory cell transistor MT95 on the other end side is connected to adrain of the selection transistor ST2. Moreover, a dummy memory celltransistor MT may be provided between the selection transistor ST1 andthe memory cell transistor MT95, or between the selection transistor ST2and the memory cell transistor MT0.

A gate of the selection transistor ST1 that is present within the samestring unit SU is connected in common to the same selection gate lineSGD. More specifically, the gate of the selection transistor ST1 that ispresent within the string unit SU0 in the block BLK0 is connected incommon to the selection gate line SGD0, and the gate of the selectiontransistor ST1 that is present in the string unit SU1 is connected incommon to the selection gate line SGD1. In the same manner, the gate ofthe selection transistor ST1 that is present in the string unit SU2,which is not illustrated, is connected in common to the selection gateline SGD2, and the gate of the selection transistor ST1 that is presentin the string unit SU3, which is not illustrated, is connected in commonto the selection gate line SGD3.

Furthermore, a gate of the selection transistor ST2 that is presentwithin the same string unit SU is connected in common to the sameselection gate line SGS. More specifically, the gate of the selectiontransistor ST2 that is present in the string unit SU0 in the block BLK0is connected in common to the selection gate line SGS0, and the gate ofthe selection transistor ST2 that is present in the string unit SU1 isconnected in common to the selection gate line SGS1. In the same manner,the gate of the selection transistor ST2 that is present in the stringunit SU2, which is not illustrated, is connected in common to theselection gate line SGS2, and the gate of the selection transistor ST2that is present in the string unit SU3, which is not illustrated, isconnected in common to the selection gate line SGS3.

Control gates of the memory cell transistors MT0 to MT95 in each of theNAND strings 16 that are present within the same block BLK are connectedin common to other word lines WL0 to WL95, respectively.

Furthermore, among the NAND strings 16 that are arranged in a matrixlayout within the memory cell array 11, a drain of the selectiontransistor ST1 in the NAND string 16 in the same column is connected toone of bit lines BL (BL0 to BL(N−1)). That is, the bit line BL connectsin common to the NAND string 16 across string units SU and the blocksBLK within a plurality of chunks CNK. Furthermore, a source of theselection transistor ST2 that is present within each chunk CNK isconnected in common to a source line SL. In addition, the source lineSL, for example, connects in common to the NAND string 16 across theplurality of chunks CNK. Moreover, the source lines SL in the planes PLN0 and PLN 1 are connected in common, and may be connected to a sourceline driver (not illustrated), but alternatively, may be connected to adifferent source line driver for every plane PLN.

Data writing and reading are collectively performed on the memory celltransistor MT that is connected to one of the word lines WL in any oneof the string units SU. This unit is referred to as a “page”.

Moreover, a unit of data erasure is not limited to one block BLK. Aplurality of blocks BLK may be collectively erased. One or several areasof one block BLK may be collectively erased.

An erasing method, for example, is disclosed in U.S. patent applicationSer. No. 13/235,389, filed on Sep. 18, 2011, which is entitled“NONVOLATILE SEMICONDUCTOR MEMORY DEVICE.” An additional erasing methodis disclosed in U.S. patent application Ser. No. 12/694,690, filed onJan. 27, 2010, which is entitled “NON-VOLATILE SEMICONDUCTOR STORAGEDEVICE.” Additionally, another erasing method is disclosed in U.S.patent application Ser. No. 13/483,610, filed on May 30, 2012, which isentitled “NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND DATA ERASE METHODTHEREOF.” The entire contents of all of these patent applications areincorporated by reference herein.

Additionally, although in the present example, the case where the memorycell transistors MT are stacked in three dimensions on the semiconductorsubstrate is described; in some cases, the memory cell transistors MTmay be arranged on the semiconductor substrate in two dimensions.

Examples of three-dimensional stacked NAND flash memory configuration isdisclosed in U.S. patent application Ser. No. 12/407,403, filed on Mar.19, 2009, which is entitled “THREE DIMENSIONAL STACKED NONVOLATILESEMICONDUCTOR MEMORY,” in U.S. patent application Ser. No. 12/406,524,filed on Mar. 18, 2009, which is entitled “THREE DIMENSIONAL STACKEDNONVOLATILE SEMICONDUCTOR MEMORY,” U.S. patent application Ser. No.12/679,991, filed on Mar. 25, 2010, which is entitled “NON-VOLATILESEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME,” andU.S. patent application Ser. No. 12/532,030, filed on Mar. 23, 2009,which is entitled “SEMICONDUCTOR MEMORY AND METHOD FOR MANUFACTURINGSAME.” The entire contents of these patent applications are incorporatedby reference herein.

1.4 Configuration of the Cross Section of the Memory Cell Array

Next, a configuration of the cross section of the memory cell array 11is described with reference to FIG. 4. The configuration of the crosssection of the memory cell array 11 is the same as the configuration ofeach of the planes PLN0 and PLN1. FIG. 4 is a cross-sectional diagramillustrating a result of cutting a source line contact LI, and the NANDstrings 16 in the string units SU0 and SU1 in the directionperpendicular to the direction in which the word line WL extends.Moreover, although in an example in FIG. 4, a case where a plurality ofNAND strings 16 are arranged in one column along a first direction D1 inone string unit SU is illustrated for brevity, it is possible that anarrangement of the NAND strings 16 along the first direction D1 in onestring unit SU is configured in various ways. For example, along thefirst direction D1, the NAND strings 16 may be arranged in parallel intwo columns, or may be arranged in a zigzag manner in four columns.

As illustrated in FIG. 4, an insulating layer 118 is provided on a sidesurface of the source line contact LI. Then, one string unit SU ispositioned between two source line contacts LI, with the insulatinglayer 118 being interposed so that the source line contact LI and wiringlayers 111, 112, and 113 are not electrically connected to one another.

In each string unit SU, the NAND string 16 is formed along a thirddirection D3 perpendicular to a semiconductor substrate 100. Morespecifically, an n-type well 101 is provided on a surface area of thesemiconductor substrate 100, and a p-type well 102 is provided on asurface area of the n-type well 101. Furthermore, an n⁺ type diffusionlayer 103 is provided on a surface area of the p-type well 102. Aninsulating layer 110 is provided on the semiconductor substrate 100, andthe wiring layer 111 that functions as the selection gate line SGS, thewiring layers 112 including 96 layers that function as the word linesWL0 to WL95, and the wiring layer 113 that functions as the selectiongate line SGD are sequentially stacked. The insulating layer 110 isprovided between each adjacent pair of the wiring layers 111, 112, and113. For example, a silicon oxide film is used for the insulating layer110. Alternatively, the plurality of wiring layers 111 and 113 may beprovided.

A memory pillar that passes through the wiring layers 111, 112, and 113and a plurality of insulating layers 110 and reaches the p-type well 102is provided per NAND string 16. The memory pillar includes two sectionsthat are stacked along the third direction D3. More specifically, amemory pillar section MP1 is provided to pass through the wiring layer111 which corresponds to the selection gate line SGS, the wiring layers112 which correspond to the word lines WL0 to WL47 and the plurality ofinsulating layers 110, and connects to the semiconductor substrate 100.In addition, a memory pillar section MP2 s provided to pass through thewiring layers 112 which correspond to the word lines WL48 to WL95, thewiring layer 113 which corresponds to the selection gate line SGD, andthe plurality of insulating layers 110, and is connected to the uppersurface of the memory pillar MP1. In the example in FIG. 3, diameters ofthe upper regions of the memory pillars MP1 and MP2 are greater thanthose of the bottom regions thereof. Accordingly, an angle that a sidesurface of the pillar makes with respect to a plane surface of thesemiconductor substrate 100 is less than 90 degrees (this shape ishereinafter referred to as a “tapered shape”). Moreover, the shape ofthe memory pillar is not limited to the tapered shape. For example, thememory pillar may have a columnar shape of which a diameter is the samefrom a top region to a bottom region, and a diameter of the bottomregion may be greater than a diameter of the upper region. Additionally,the structure in which two memory pillar sections are stacked up isdescribed. However, a structure in which one memory pillar section isprovided may be employed and a structure in which three or more memorypillar sections are stacked may be employed. The memory pillar sectionsMP1 and MP2, are hereinafter simply referred to as a “memory pillar MP”when they do not need to be distinguished from each other.

A block insulating film 116, a charge storage layer 115, and a tunnelinsulating film 114 are staked in this order on a side surface of thememory pillar MP, and a semiconductor layer 117 is within the memorypillar MP. For example, a silicon oxide film is used for the blockinsulating film 116 and the tunnel insulating film 114. For example, asilicon nitride film is used for the charge storage layer 115. Forexample, polycrystalline silicon is used for the semiconductor layer117. The semiconductor layer 117 within the memory pillar MP is an areain which a channel is formed when the memory cell transistor MT and theselection transistors ST1 and ST2 are turned on.

With the memory pillar MP and the word lines WL0 to WL95 (the wiringlayer 112), the memory cell transistors MT0 to MT95 are formed. In thesame manner, with the memory pillar MP and the selection gate lines SGD(the wiring layer 113) and SGS (the wiring layer 111), the selectiontransistors ST1 and ST2 are formed, respectively. The upper surface ofthe memory pillar MP2 is connected to the bit line BL (not illustrated).According to the present embodiment, a group of the word lines WL0 toWL47 is defined as a lower layer WL group, and a group of the word linesWL48 to WL95 is defined as an upper layer WL group.

Furthermore, the source line contact LI has a linear shape along thefirst direction D1. For example, polycrystalline silicon is used for thesource line contact LI. The bottom surface of the source line contact LIis connected to the n⁺ the diffusion layer 103, and the upper surfacethereof is connected to the source line SL (not illustrated).Furthermore, the insulating layer 118 is provided on the side surface ofthe source line contact LI so that the source line contact LI and thewiring layers 111, 112, and 113 are not electrically connected to oneanother. For example, a silicon oxide film is used for the insulatinglayer 118.

1.5 Configuration of the Row Decoder

Next, a configuration of the row decoder is described with reference toFIG. 5. Although in an example in FIG. 5, the row decoder 13C0 isillustrated, the other row decoders have the same configuration as well.Furthermore, although the example in FIG. 5, only the transistors thatcorrespond to the blocks BLK0 and BLK2 are illustrated, the transistorsthat correspond to the blocks BLK4 and BLK6 have the same configurationas well. In the following description, one of the source and the drainof the transistor may be referred to as a “one end of the transistor”and the other of the source and the drain of the transistor may bereferred to as the “other end of the transistor” or simply as the “otherend.”.

As illustrated, the row decoder 13C0 includes block decoders 60 (60B0,60B2, 60B4, and 60B6), high breakdown voltage n channel MOS transistors400 (400_0 to 400_95, 400_SD0 to 400_SD3, and 400_SS0 to 400_SS3), andhigh breakdown voltage n channel MOS transistors 402 (402_0 to 402_95,402_SD0 to 402_SD3, and 402_SS0 to 402_SS3).

Each block decoder 60 decodes the address information ADD (for example,the block address). Then, each block decoder 60 controls ON and OFFstates of the corresponding transistor according to a result of thedecoding, and electrically connects the wires GWL0 to GWL95, GSGD0 toGSGD3, and GSGS0 to GSGS3, respectively to the word lines WL0 to WL95and the selection gate lines SGD0 to SGD3 and SGS0 to SGS3 in thecorresponding block BLK.

More specifically, if the block BLK0 is selected, the block decoder 60B0(BLK0 decoder in FIG. 5) causes the transistors 400 (400_0 to 400_95,400_SD0 to 400_SD3, and 400_SS0 to 400_SS3) to be in the ON state.Furthermore, if the block BLK2 is selected, the block decoder 60B2 (BLK2decoder in FIG. 5) causes the transistors 402 (402_0 to 402_95, 402_SD0to 402_SD3, and 402_SS0 to 402_SS3) to be in the ON state. In the samemanner, the block decoder 60B4 (BLK4 decoder in FIG. 5) and the blockdecoder 60B6 (BLK6 decoder in FIG. 5) correspond to the block BLK4 andBLK6, respectively.

The transistors 400_0 to 400_95 function as switching elements thatconnect the wires GWL0 to GWL95, and the word lines WL0 to WL95 in thecorresponding block BLK, to one another, respectively. One end of thetransistors 400_0 to 400_95 is connected to each of the word lines WL0to WL95 in the corresponding block BLK0, and the other end thereof isconnected to each of the wires GWL0 to GWL95. Furthermore, gates of thetransistors 400_0 to 400_95 are connected in common to the block decoder60B0.

The transistors 400_SD0 to 400_SD3 function as switching elements thatconnect the wires GSGD0 to GSGD3, and the selection gate lines SGD0 toSGD3 in the corresponding BLK0, to one another, respectively. One end ofthe transistors 400_SD0 to 400_SD3 is connected to each of the selectiongate lines SGD0 to SGD3 in the corresponding block BLK0, and the otherend thereof is connected to each of the wires GSGD0 to GSGD3.Furthermore, gates of the transistors 400_SD0 to 400_SD3 are connectedin common to the block decoder 60B0.

The transistors 400_SS0 to 400_SS3 function as switching elements thatconnect the wires GSGS0 to GSGS3, and the selection gate lines SGS0 toSGS3 in the corresponding BLK0, to one another, respectively. One end ofthe transistors 400_SS0 to 400_SS3 is connected to each of the selectiongate lines SGS0 to SGS3 in the corresponding block BLK0, and the otherend thereof is connected to each of the wires GSGS0 to GSGS3.Furthermore, gates of the transistors 400_SS0 to 400_SS3 are connectedto the block decoder 60B0.

Moreover, for example, a transistor may be provided that connects agrounding voltage (VSS) wire to each of the selection gate lines SGD0 toSGD3 and SGS0 to SGS3 in the corresponding block BLK0. In this case, aninversion signal of the block decoder 60B0 is input into a gate of eachtransistor.

The transistor 402 has the same configuration as the transistor 400.

One end of the transistors 402_0 to 402_95 is connected to each of theword lines WL0 to WL95 in the corresponding block BLK2, and the otherend thereof is connected to each of the wires GWL0 to GWL95.Furthermore, gates of the transistors 402_0 to 402_95 are connected incommon to the block decoder 60B2.

One end of the transistors 402_SD0 to 402_SD3 is connected to each ofthe selection gate lines SGD0 to SGD3 in the corresponding block BLK2,and the other end thereof is connected to each of the wires GSGD0 toGSGD3. Furthermore, gates of the transistors 402_SD0 to 402_SD3 areconnected in common to the block decoder 60B2.

One end of the transistors 402_SS0 to 402_SS3 is connected to each ofthe selection gate lines SGS0 to SGS3 in the corresponding block BLK2,and the other end thereof is connected to each of the wires GSGS0 toGSGS3. Furthermore, gates of the transistors 402_SS0 to 402_SS3 areconnected to the block decoder 60B2.

1.6 Configuration of the WL Selection Circuit

Next, a configuration of the WL selection circuit 14A is described.

1.6.1 Configuration of the WL Selection Circuit

First, a configuration of the WL selection circuit 14A is described withreference to FIGS. 6 to 8. Although FIGS. 6 to 8 illustrate the WLselection circuit 14A, the WL selection circuit 14B has the sameconfiguration as well.

FIG. 6 is a schematic diagram illustrating the configuration of the WLselection circuit 14A. As illustrated in FIG. 6, the WL selectioncircuit 14A generally includes a layer selection circuit 30C0 thatcorresponds to the chunk CNK0, a layer selection circuit 30C2 thatcorresponds to the chunk CNK2, and a chunk/zone selection circuit 31Athat corresponds to the chunks CNK0 and CNK2.

Based on the control signal S_SW that is transmitted from the first rowcontrol circuit 25A1, the chunk/zone selection circuit 31A outputsvoltages of the wires CG<11:0>, CGU(D/S), and UCG to the layer selectioncircuits 30C0 and 30C2. The chunk/zone selection circuit 31A includes azone selection circuit 34A, and chunk selection circuits 35C0 and 35C2.

A plurality of input terminals of the zone selection circuit 34A areconnected to the wires CG<11:0> and CGU(D/S). A plurality of outputterminals of the zone selection circuit 34A are connected in common to alower layer WL selection circuit 32C0 and an upper layer WL selectioncircuit 33C0 of the layer selection circuit 30C0, and a lower layer WLselection circuit 32C2 and an upper layer WL selection circuit 33C2 ofthe layer selection circuit 30C2. If the first row selection circuit 12Aselects any one of the corresponding plurality of chunks CNK (CNK0 andCNK2), the zone selection circuit 34A selects a plurality of zones Znthat corresponds to the selected word line WL. Then, the zone selectioncircuit 34A outputs the voltages of the wires CG<11:0> and CGU(D/S) tothe layer selection circuits 30C0 and 30C2, according to the selectedzones Zn.

According to the present embodiment, a set of three word lines WL isdefined as one zone Zn. Therefore, 32 zones Zn0 to Zn31 are providedcorresponding to 96 word lines WL0 to WL95. More specifically, the zoneZn0 includes the word lines WL0 to WL2. The zone Zn1 includes the wordlines WL3 to WL5 and the zone Zn2 includes the word lines WL6 to WL8. Inthe same manner, the zone Zn31 includes the word lines WL93 to WL95. Thezone selection circuit 34A selects four consecutive zone Zn thatcorresponds to the selected word line WL. More specifically, forexample, if the word line WL10 is selected, the word line WL is includedin the zone Zn3. In this case, the zone selection circuit 34A outputsthe voltage of the wire CG<11:0> to layer selection circuits 30C0 and30C2, corresponding to four consecutive selection zones Zn (for example,the zones Zn2 to Zn5) that include the zone Zn3. Furthermore, the zoneselection circuit 34A outputs the voltage of the wire CGU (D/S) to thelayer selection circuits 30C0 and 30C2, corresponding to a non-selectedzone Zn.

Moreover, the zone selection circuit 34A according to the presentembodiment corresponds to a plurality of chunks CNK (e.g., CNK0 andCNK2), but is not limited to this. For example, one zone selectioncircuit 34 may be provided for each chunk CNK.

A plurality of input terminals of the chunk selection circuit 35C0 areconnected to the wire UCG or CGU (D/S), and an output terminal thereofis connected in common to the layer selection circuits 30C0 and 30C2. Ifthe selected block BLK is included in the corresponding chunk CNK0, thechunk selection circuit 35C0 outputs the voltage of the wire CGU (D/S)to the layer selection circuit 30C0. On the other hand, if the selectedblock BLK is not included in the corresponding chunk CNK0, the chunkselection circuit 35C0 outputs a voltage of the wire UCG to the layerselection circuit 30C0.

The chunk selection circuit 35C2 has the same configuration as the chunkselection circuit 35C0, and corresponds to the chunk CNK2.

Based on the control signal S_SW that is transmitted from the first rowcontrol circuit 25A1, the layer selection circuit 30C0 outputs any oneof output voltages of the zone selection circuit 34A and the chunkselection circuit 35C0 to the wire GWL0 to GWL95 that correspond to theword lines WL0 to WL95, respectively, of the chunk CNK0. The layerselection circuit 30C0 includes the lower layer WL selection circuit32C0 and the upper layer WL selection circuit 33C0.

A plurality of input terminals of the lower layer WL selection circuit32C0 are connected to the zone selection circuit 34A or the chunkselection circuit 35C0, and a plurality of output terminals thereof areconnected to the wires GWL0 to GWL 47, respectively. For example, if theselected block BLK is included in the corresponding chunk CNK0 and theselected word line WL is included in a lower layer WL group, the lowerlayer WL selection circuit 32C0 outputs the output voltage of the zoneselection circuit 34A to the wires GWL0 to GWL47. On the other hand, forexample, if the selected word line WL is not included in the lower layerWL group, the lower layer WL selection circuit 32C0 outputs the outputvoltage of the chunk selection circuit 35C0 to the wires GWL0 to GWL47.

A plurality of input terminals of the upper layer WL selection circuit33C0 are connected to the zone selection circuit 34A or the chunkselection circuit 35C0, and a plurality of output terminals thereof areconnected to the wires GWL48 to GWL95, respectively. For example, if theselected block BLK is included in the corresponding chunk CNK0 and theselected word line WL is included in an upper layer WL group, the upperlayer WL selection circuit 33C0 outputs the output voltage of the zoneselection circuit 34A to the wires GWL48 to GWL95. On the other hand,for example, if the selected word line WL is not included in the upperlayer WL group, the upper layer WL selection circuit 33C0 outputs theoutput voltage of the chunk selection circuit 35C0 to the wires GWL48 toGWL95.

The layer selection circuit 30C2 has the same configuration as the layerselection circuit 30C0, and corresponds to the chunk CNK2. Then, thelayer selection circuit 30C2 includes the lower layer WL selectioncircuit 32C2 and the upper layer WL selection circuit 33C2.

The lower layer WL selection circuit 32C2 has the same configuration asthe lower layer WL selection circuit 32C0, and outputs anyone of theoutput voltage of the zone selection circuit 34A and an output voltageof the chunk selection circuit 35C2 to the wires GWL0 to GWL47 thatcorrespond to the chunk CNK2.

The upper layer WL selection circuit 33C2 has the same configuration asthe upper layer WL selection circuit 33C0, and outputs anyone of theoutput voltages of the zone selection circuit 34A and the chunkselection circuit 35C2 to the wires GWL48 to GWL95 that correspond tothe chunk CNK2.

1.6.2 Configuration of the Zone Selection Circuit

Next, a configuration of the zone selection circuit 34A is describedwith reference to FIG. 7.

As illustrated in FIG. 7, each of the zone selection circuit 34A, thechunk selection circuit 35C0, and the layer selection circuit 30C0 isdivided into four selection units, corresponding to the word lines WL0to WL95.

The zone selection circuit 34A includes four zone selection units 39A to39D. The zone selection units 39A to 39D are hereinafter generallyreferred to as a “zone selection unit 39”. Moreover, the number of zoneselection units is not limited to four.

The zone selection unit 39A corresponds to the zones Zn0 to Zn3 (theword lines WL0 to WL11) and the zones Zn16 to Zn19 (the word lines WL48to WL59) in the chunks CNK0 and CNK2. An output terminal of the zoneselection unit 39A is connected in common to a lower layer WL selectionunit 37A and an upper layer WL selection unit 38A of the layer selectioncircuits 30C0 and 30C2. If any one of the zones Zn0 to Zn3 thatcorrespond to the word lines WL0 to WL11 or the zones Zn16 to Zn19 thatcorrespond to the word lines WL48 to WL59 in the chunks CNK 0 and CNK2is selected, the zone selection unit 39A outputs the voltage of the wireCG<11:0> to the lower layer WL selection unit 37A and the upper layer WLselection unit 38A of the layer selection circuits 30C0 and 30C2. On theother hand, if the zone Zn is non-selected, the voltage of the wire CGU(D/S) is output to the lower layer WL selection units 37A and the upperlayer WL selection unit 38A of the layer selection circuits 30C0 and30C2.

Zone selection units 39B to 39D have the same configuration as the zoneselection unit 39A. The zone selection unit 39B corresponds to the zonesZn4 to Zn7 (the word lines WL12 to WL23) and the zones Zn20 to Zn23 (theword lines WL60 to WL71) in the chunks CNK0 and CNK2. The zone selectionunit 39C corresponds to the zones Zn8 to Zn11 (the word lines WL24 toWL35) and the zones Zn24 to Zn27 (the word lines WL72 to WL83) in thechunks CNK0 and CNK2. The zone selection unit 39D corresponds to thezones Zn12 to Zn15 (the word lines WL36 to WL47) and the zones Zn28 toZn31 (the word lines WL84 to WL95) in the chunks CNK0 and CNK2.

1.6.3 Configuration of the Chunk Selection Circuit

Next, a configuration of the chunk selection circuit 35C0 is describedreferring back to FIG. 7.

As illustrated in FIG. 7, the chunk selection circuit 35C0 includes fourchunk selection units 36A to 36D. The chunk selection units 36A to 36Dare hereinafter generally referred to as a “chunk selection unit 36”.Moreover, the number of chunk selection units is not limited to four.

The chunk selection unit 36A corresponds to the wires GWL0 to GWL11 andGWL 48 to GWL59 in the chunk CNK0. An output terminal of the chunkselection unit 36A is connected in common to the lower layer WLselection unit 37A and the upper layer WL selection unit 38A of thelayer selection circuit 30C0. If the corresponding block BLK isselected, the chunk selection unit 36A outputs the voltage of the wireCGU (D/S) to the lower layer WL selection unit 37A and the upper layerWL selection unit 38A. On the other hand, if the corresponding block BLKis not selected, the chunk selection unit 36A outputs the voltage of thewire UCG to the lower layer WL selection unit 37A and the upper layer WLselection unit 38A.

Chunk selection units 36B to 36D have the same configuration as thechunk selection unit 36A. The chunk selection unit 36B corresponds tothe wires GWL12 to GWL23 and GWL60 to GWL71 in the chunk CNK0. The chunkselection unit 36C corresponds to the wires GWL24 to GWL35 and GWL72 toGWL83 in the chunk CNK0. The chunk selection unit 36D corresponds to thewires GWL36 to GWL47 and GWL84 to GWL95 in the chunk CNK0.

1.6.4 Configuration of the Layer Selection Circuit

Next, a configuration of the layer selection circuit 30C0 is describedreferring back to FIG. 7.

As illustrated in FIG. 7, the lower layer WL selection circuit 32C0includes four lower layer WL selection units 37A to 37D. The lower layerWL selection units 37A to 37D are hereinafter generally referred to as a“lower layer WL selection unit 37”. Moreover, the number of lower layerWL selection units is not limited to four.

An output terminal of the lower layer WL selection unit 37A is connectedto the wires GWL0 to GWL11 in the chunk CNK0. If the selected word lineWL is included in the lower layer WL group in the chunk CNK0, the lowerlayer WL selection unit 37A outputs an output voltage of the zoneselection unit 39A to the wires GWL0 to GWL11. On the other hand, if theselected word line WL is not included in the lower layer WL group in thechunk CNK0, the lower layer WL selection unit 37A outputs an outputvoltage of the chunk selection unit 36A to the wires GWL0 to GWL11.

Lower layer WL selection units 37B to 37D have the same configuration asthe lower layer WL selection unit 37A. The lower layer WL selection unit37B is connected to the wires GWL12 to GWL23 in the chunk CNK0. Thelower layer WL selection unit 37C is connected to the wires GWL24 toGWL35 in the chunk CNK0. The lower layer WL selection unit 37D isconnected to the wires GWL36 to GWL47 in the chunk CNK0.

The upper layer WL selection circuit 33C0 includes four upper layer WLselection units 38A to 38D. The upper layer WL selection units 38A to38D are hereinafter generally referred to as an “upper layer WLselection unit 38”. Moreover, the number of upper layer WL selectionunits is not limited to four.

An output terminal of the upper layer WL selection unit 38A is connectedto the wires GWL48 to GWL59 in the chunk CNK0. If the selected word lineWL is included in the upper layer WL group in the chunk CNK0, the upperlayer WL selection unit 38A outputs the output voltage of the zoneselection unit 39A to the wires GWL48 to GWL59. On the other hand, ifthe selected word line WL is not included in the upper layer WL group inthe chunk CNK0, the upper layer WL selection unit 38A outputs the outputvoltage of the chunk selection unit 36A to the wires GWL48 to GWL59.

Upper layer WL selection units 38B to 38D have the same configuration asthe upper layer WL selection unit 38A. The upper layer WL selection unit38B is connected to the wires GWL60 to GWL71 in the chunk CNK0. Theupper layer WL selection unit 38C is connected to the wires GWL72 toGWL83 in the chunk CNK0. The upper layer WL selection unit 38D isconnected to the wires GWL84 to GWL95 in the chunk CNK0.

1.6.5 Configuration of the Zone Selection Unit

Next, a configuration of the zone selection unit 39A is described withreference to FIG. 8.

As illustrated in FIG. 8, the zone selection unit 39A includes switch(SW) circuits 40 and 41 (41A to 41D).

The switch circuit 40 includes two input terminals and one outputterminal. The two input terminals of the switch circuit 40 are connectedto the wire CGU(D) and the wire CGU(S), respectively, and the outputterminal is connected to the switch circuits 41A to 41D. The switchcircuit 40 outputs any one of voltages of the wire CGU(D) and the wireCGU(S) to switch circuits 41A to 41D.

The switch circuit 41 corresponds to one zone Zn that is included in thelower layer WL group and one zone Zn that is included in the upper layerWL group. Therefore, based on zone information of the lower layer WLgroup that includes the selected word line WL or of the upper layer WLgroup that includes the selected word line WL, the first row controlcircuit 25A1 controls the switch circuit 41.

More specifically, the switch circuit 41A corresponds to the zones Zn0(the word lines WL0 to WL2) and Zn16 (the word lines WL48 to WL50) inthe chunks CNK0 and CNK2. The switch circuit 41A includes four inputterminals and three output terminals. Among the four input terminals ofthe switch circuit 41A, one input terminal is connected to an outputterminal of the switch circuit 40, and each of the other three inputterminals is connected to a wire CG<2:0>. Each output terminal of theswitch circuit 41A is connected in common to an input terminal of aswitch circuit 44A of the lower layer WL selection unit 37A of the layerselection circuits 30C0 and 30C2 and to an input terminal of a switchcircuit 45A of the upper layer WL selection unit 38A. For example, ifany one of the zone Zn0 and the zone Zn16 is selected in the chunks CNK0and CNK2, the switch circuit 41A outputs a voltage of the wire CG<2:0>from the three output terminals. Furthermore, if the zone Zn0 and thezone Zn16 in the chunks CNK0 and CNK2 are non-selected, the switchcircuit 41A outputs an output voltage of the switch circuit 40, that is,any one of the voltages of the wires CGU(D) and CGU(S), from the threeoutput terminals.

Switch circuits 41B to 41D have the same configuration as the switchcircuit 41A.

The switch circuit 41B corresponds to the zones Zn1 (the word lines WL3to WL5) and Zn17 (the word lines WL51 to WL53) in the chunks CNK0 andCNK2. Among four input terminals of the switch circuit 41B, one inputterminal is connected to the output terminal of the switch circuit 40,and each of the other three input terminals is connected to a wireCG<5:3>. Each output terminal of the switch circuit 41B is connected incommon to an input terminal of a switch circuit 44B of the lower layerWL selection unit 37A of the layer selection circuits 30C0 and 30C2 andan input terminal of a switch circuit 45B of the upper layer WLselection unit 38A.

A switch circuit 41C corresponds to the zones Zn2 (the word lines WL6 toWL8) and Zn18 (the word lines WL54 to WL56) in the chunks CNK0 and CNK2.Among four input terminals of the switch circuit 41C, one input terminalis connected to the output terminal of the switch circuit 40, and eachof the other three input terminals is connected to a wire CG<8:6>. Eachoutput terminal of the switch circuit 41C is connected in common to aninput terminal of a switch circuit 44C of the lower layer WL selectionunit 37A of the layer selection circuits 30C0 and 30C2 and an inputterminal of a switch circuit 45C of the upper layer WL selection unit38A.

The switch circuit 41D corresponds to the zones Zn3 (the word lines WL9to WL11) and Zn19 (the word lines WL57 to WL59) in the chunks CNK0 andCNK2. Among four input terminals of the switch circuit 41D, one inputterminal is connected to the output terminal of the switch circuit 40,and each of the other three input terminals is connected to a wireCG<11:9>. Each output terminal of the switch circuit 41D is connected incommon to an input terminal of a switch circuit 44D of the lower layerWL selection unit 37A of the layer selection circuits 30C0 and 30C2 andan input terminal of a switch circuit 45D of the upper layer WLselection unit 38A.

1.6.6 Configuration of the Chunk Selection Unit

Next, a configuration of the chunk selection unit 36A is described withreference to FIG. 8.

As illustrated in FIG. 8, the chunk selection unit 36A includes a switchcircuit 42 (42A and 42B) and a switch circuit (43A and 43B). Switchcircuits 42A and 42B and switch circuits 43A and 43B have the sameconfiguration as the switch circuit 40.

The switch circuits 42A and 42B output any one of the voltages of thewire CGU(D) and the wire CGU(S) to the switch circuits 43A and 43B,respectively.

The switch circuit 43A outputs any one of an output voltage of theswitch circuit 42A and the voltage of the wire UCG to the switchcircuits 44A and 44B of the lower layer WL selection unit 37A and theswitch circuits 45A to 45D of the upper layer WL selection unit 38A.

The switch circuit 43B outputs any one of an output voltage of theswitch circuit 42B and the voltage of the wire UCG to the switchcircuits 44C and 44D of the lower layer WL selection unit 37A.

Moreover, connections between output terminals of the switch circuit 43Aand 43B and input terminals of the switch circuits 44A to 44D and 45A to45D are not limited to those described herein.

1.6.7 Configuration of the Lower Layer WL Selection Unit

Next, a configuration of the lower layer WL selection unit 37A isdescribed with reference to FIG. 8.

As illustrated in FIG. 8, the lower layer WL selection unit 37A includesa switch circuit 44 (44A to 44D). Switch circuits 44A to 44D have thesame configuration as the switch circuit 41 (41A to 41D).

One input terminal of the switch circuit 44A is connected to an outputterminal of the switch circuit 43A, and the other three input terminalsare connected to three output terminals of the switch circuit 41A,respectively. Each output terminal of the switch circuit 44A isconnected to each of the wires GWL0 to GWL2. The switch circuit 44Aoutputs any one of an output voltage of the switch circuit 41A and anoutput voltage of the switch circuit 43A to the wires GWL0 to GWL2.

In the same manner, the switch circuit 44B outputs any one of an outputvoltage of the switch circuit 41B and the output voltage of the switchcircuit 43A to the wires GWL3 to GWL5. The switch circuit 44C outputsany one of an output voltage of the switch circuit 41C and an outputvoltage of the switch circuit 43B to the wires GWL6 to GWL8. The switchcircuit 44D outputs any one of an output voltage of the switch circuit41D and the output voltage of the switch circuit 43B to the wires GWL9to GWL11.

The upper layer WL selection unit 38A includes a switch circuit 45 (45Ato 45D). Switch circuits 45A to 45D have the same configuration as theswitch circuit 41 (41A to 41D).

One input terminal of the switch circuit 45A is connected to the outputterminal of the switch circuit 43A, and the other three input terminalsare connected to the three output terminals of the switch circuit 41A,respectively. Each output terminal of the switch circuit 45A isconnected to each of the wires GWL48 to GWL50. The switch circuit 45Aoutputs any one of the output voltage of the switch circuit 41A and theoutput voltage of the switch circuit 43A to the wires GWL48 to GWL50.

In the same manner, the switch circuit 45B outputs any one of the outputvoltage of the switch circuit 41B and the output voltage of the switchcircuit 43A to the wires GWL51 to GWL53. The switch circuit 45C outputsany one of the output voltage of the switch circuit 41C and the outputvoltage of the switch circuit 43A to the wires GWL54 to GWL56. Theswitch circuit 45D outputs anyone of the output voltage of the switchcircuit 41D and the output voltage of the switch circuit 43A to thewires GWL57 to GWL59.

1.7 Configuration of the Switch Circuit

Next, a configuration of the switch circuit that is included in the WLselection circuit 14A is described.

1.7.1 Configuration of the Switch Circuit 40

First, a configuration of the switch circuit 40 is described withreference to FIG. 9.

As illustrated in FIG. 9, the switch circuit 40 includes level shiftersLSTP that are respectively connected to gates of high breakdown voltagen channel MOS transistors 200 and 201, and gates of transistors 200 and201.

One end of the transistor 200 is connected to the wire CGU(D), and theother end is connected to input terminals of the switch circuits 41A to41D. A gate of the transistor 200 is connected to an output terminal ofthe level shifter LSTP into which the control signal S_SW1 is input. Thecontrol signal S_SW (S_SW1, S_SW2, and so forth) is received from thefirst row control circuit 25A1. The level shifter LSTP applies a voltage(an input voltage) for driving a transistor, to a gate of thecorresponding transistor, according to the control signal S_SW that isto be input. More specifically, for example, if a control signal S_SW1is at a “H” level, the level shifter LSTP that is connected to thetransistor 200 applies a voltage that is higher than a voltage valuewhich is generated by adding a threshold voltage of the transistor 200to the voltage of the wire CGU(D), to the gate of the transistor 200.Accordingly, the transistor 200 enters into the ON state, and outputsthe voltage of the wire CGU(D) to the switch circuits 41A to 41D.

One end of the transistor 201 is connected to the wire CGU(S), and theother end is connected to the other end of the transistor 200 and theswitch circuits 41A to 41D. A gate of the transistor 201 is connected tothe output terminal of the level shifter LSTP into which a controlsignal S_SW2 is input.

If the control signal S_SW1 is at the “H” level, the switch circuit 40causes the transistor 200 to be in the ON state, and electricallyconnects the wire CGU(D) and the switch circuits 41A to 41D to oneanother. On the other hand, if the control signal S_SW2 is at the “H”level, the switch circuit 40 causes the transistor 201 to be in the ONstate, and electrically connects the wire CGU(S) and the switch circuits41A to 41D to one another.

1.7.2 Configuration of the Switch Circuit 41A

Next, a configuration of the switch circuit 41A is described withreference to FIG. 10. Moreover, although in an example in FIG. 10, acircuit diagram of the switch circuit 41A is illustrated, the switchcircuits 41B to 41D have the same configuration as well.

As illustrated in FIG. 10, the switch circuit 41A includes the levelshifter LSTP that is connected to gates of high breakdown voltage nchannel MOS transistors 202 to 207 and gates of transistors 202, 204,and 206, and a level shifter BLSTP that is connected to gates oftransistors 203, 205, and 207.

The level shifter BLSTP is a level shifter that is able to transfer ahigher voltage than the level shifter LSTP. According to the presentembodiment, the level shifter BLSTP is used for a transistor that isable to transfer a high-voltage program voltage VPGM (for example,approximately 20 V). That is, with the WL selection circuit 14A, thelevel shifter BLSTP is used for the transistor to which the voltage ofthe wire CG<11:0> is applied. On the other hand, the level shifter LSTPis used for the transistor to which the voltages of the wires CGU(D) andCGU(S) and the wire UCG are applied.

A transistor (transistors 203, 205, and 207 in the example in FIG. 10)that transfers the voltage of the wire CG<11:0> and a high breakdownvoltage transistor that is used for the level shifter BLSTP need totransfer a voltage higher than a high breakdown voltage transistor thatis used for the other transistors (the transistors 202, 204, and 206 inthe example in FIG. 10) and the level shifter LSTP. For this reason,sizes of the transistor that transfers the voltage of the wire CG<11:0>and the transistor that is used for the level shifter BLSTP are largerthan sizes of the transistor that transfers the voltages of the wiresCGU(D) and CGU(S) and the wire UCG and the transistor that is used forthe level shifter LSTP. For this reason, a circuit area of the levelshifter BLSTP is larger than a circuit area of the level shifter LSTP.

One end of the transistor 202 is connected to the transistors 204 and206 and an output terminal of the switch circuit 40. The other end ofthe transistor 202 is connected to an output terminal (or an outputwire) 41A<0> of the switch circuit 41A. A gate of the transistor 202 isconnected to gates of the transistors 204 and 206, and the outputterminal of the level shifter LSTP into which a control signal S_SW3 isinput.

The other end of the transistor 204 is connected to an output terminal41A<1> of the switch circuit 41A.

The other end of the transistor 206 is connected to an output terminal41A<2> of the switch circuit 41A.

One end of the transistor 203 is connected to a wire CG<0>, and theother end is connected to the other end of the transistor 202 and anoutput terminal 41A<0> of the switch circuit 41A. A gate of thetransistor 203 is connected to gates of the transistors 205 and 207 andan output terminal of the level shifter BLSTP into which a controlsignal S_SW4 is input.

One end of the transistor 205 is connected to a wire CG<1>, and theother end is connected to the other end of the transistor 204 and theoutput terminal 41A<1> of the switch circuit 41A.

One end of the transistor 207 is connected to a wire CG<2>, and theother end is connected to the other end of the transistor 206 and theoutput terminal 41A<2> of the switch circuit 41A.

If the control signal S_SW3 is at the “H” level, the switch circuit 41Acauses the transistors 202, 204, and 206 to be in the ON state, andoutputs the output voltage (any one of the voltage of the wire CGU(D)and the voltage of the wire CGU(S)) of the switch circuit 40 from anoutput terminal 41A<2:0>. On the other hand, if the control signal S_SW4is at the “H” level, the switch circuit 41A causes the transistors 203,205, and 207 to be in the On state, and outputs the voltage of the wireCG<2:0> from the output terminal 41A<2:0>.

1.7.3 Configuration of the Switch Circuit 42A

A configuration of the switch circuit 42A is described with reference toFIG. 11. Moreover, although in an example in FIG. 11, a circuit diagramof the switch circuit 42A is illustrated, the switch circuit 42B has thesame configuration as well.

As illustrated in FIG. 11, the switch circuit 42A includes the levelshifters LSTP that are respectively connected to gates of high breakdownvoltage n channel MOS transistors 208 and 209, and gates of transistors208 and 209. The configuration of the switch circuit 42A is the same asthat of the switch circuit 40 in FIG. 9. The transistors 208 and 209 ofthe switch circuit 42A are equivalent to the transistors 200 and 201 ofthe switch circuit 40.

One end of the transistor 208 is connected to the wire CGU(D), and theother end is connected to one input terminal (or one input wire) of theswitch circuit 43A. A gate of the transistor 208 is connected to theoutput terminal of the level shifter LSTP into which a control signalS_SW5 is input.

One end of the transistor 209 is connected to the wire CGU(S), and theother end is connected to the other end of the transistor 208 and oneinput terminal of the switch circuit 43A. A gate of the transistor 209is connected to the output terminal of the level shifter LSTP into whicha control signal S_SW6 is input.

If the control signal S_SW5 is at the “H” level, the switch circuit 42Acauses the transistor 208 to be in the ON state, and electricallyconnects the wire CGU(D) and the switch circuit 43A to each other. Onthe other hand, if the control signal S_SW2 is at the “H” level, theswitch circuit 42A causes the transistor 209 to be in the ON state, andelectrically connects the wire CGU(S) and the switch circuits 43A.

1.7.4 Configuration of the Switch Circuit 43A

Next, a configuration of the switch circuit 43A is described withreference to FIG. 11. Moreover, although in the example in FIG. 11, acircuit diagram of the switch circuit 43A is illustrated, the switchcircuit 43B has the same configuration as well.

As illustrated in FIG. 11, the switch circuit 43A includes the levelshifter LSTP that is connected to gates of high breakdown voltage nchannel MOS transistors 210 and 211, and gates of transistors 210 and211. The configuration of the switch circuit 43A is the same as that ofthe switch circuit 40 in FIG. 9. The transistors 210 and 211 of theswitch circuit 43A are equivalent to the transistors 200 and 201 of theswitch circuit 40.

One end of the transistor 210 is connected to the wire UCG, and theother end is connected to the input terminals of the switch circuits44A, 44B and 45A to 45D. A gate of the transistor 210 is connected tothe output terminal of the level shifter LSTP into which a controlsignal S_SW7 is input.

One end of the transistor 211 is connected to an output terminal of theswitch circuit 42A, and the other end is connected to the other end ofthe transistor 210 and the input terminals of the switch circuits 44A,44B, and 45A to 45D. A gate of the transistor 211 is connected to theoutput terminal of the level shifter LSTP into which a control signalS_SW8 is input.

If the control signal S_SW7 is at the “H” level, the switch circuit 43Acauses the transistor 210 to be in the ON state, and electricallyconnects the wire UCG and the switch circuits 44A, 44B, and 45A to 45Dto one another. On the other hand, if the control signal S_SW8 is at the“H” level, the switch circuit 43A causes the transistor 211 to be in theON state, and electrically connects the switch circuit 42A and theswitch circuits 44A, 44B, and 45A to 45D to one another.

1.7.5 Configuration of the Switch Circuit 44A

Next, a configuration of the switch circuit 44A is described withreference to FIG. 12. Moreover, although in an example in FIG. 12, acircuit diagram of the switch circuit 44A is illustrated, the switchcircuits 44B to 44D have the same configuration as well.

As illustrated in FIG. 12, the switch circuit 44A includes the levelshifter LSTP that is connected to gates of high breakdown voltage nchannel MOS transistors 212 to 217, and gates of transistors 212, 214,and 216, and the level shifter BLSTP that is connected to gates oftransistors 213, 215, and 217. The configuration of the switch circuit44A is the same as that of the switch circuit 41A in FIG. 10. Thetransistors 212 to 217 of the switch circuit 44A are equivalent to thetransistors 202 to 207 of the switch circuit 41A.

One end of the transistor 212 is connected to the transistors 214 and216, and the output terminal of the switch circuit 43A. The other end ofthe transistor 212 is connected to the wire GWL0. A gate of thetransistor 212 is connected to gates of the transistors 214 and 216, andthe output terminal of the level shifter LSTP into which a controlsignal S_SW9 is input.

The other end of the transistor 214 is connected to the wire GWL1.

The other end of the transistor 216 is connected to the wire GWL2.

One end of the transistor 213 is connected to the output terminal 41A<0>of the switch circuit 41A, and the other end is connected to the otherend of the transistor 212 and the wire GWL0. A gate of the transistor213 is connected to gates of the transistors 215 and 217 and the outputterminal of the level shifter BLSTP into which a control signal S_SW10is input.

One end of the transistor 215 is connected to the output terminal 41A<1>of the switch circuit 41A, and the other end is connected to the otherend of the transistor 214 and the wire GWL1.

One end of the transistor 217 is connected to the output terminal 41A<2>of the switch circuit 41A, and the other end is connected to the otherend of the transistor 216 and the wire GWL2.

If the control signal S_SW9 is at the “H” level, the switch circuit 44Acauses the transistors 212, 214, and 216 to be in the ON state, andoutputs the output voltage (any one of the voltage of the wire CGU(D),the voltage of the wire CGU(S), and the voltage of the wire UCG) of theswitch circuit 43A to the wires GWL0 to GWL2. On the other hand, if thecontrol signal S_SW10 is at the “H” level, the switch circuit 44A causesthe transistors 213, 215, and 217 to be in the ON state, and outputs theoutput voltage (any one of the voltage of the wire CG<2:0>, the voltageof the wire CGU(D), and the voltage of the wire CGU(S)) of the switchcircuit 41A to the wires GWL0 to GWL2.

1.7.6 Configuration of the Switch Circuit 45A

Next, a configuration of the switch circuit 45A is described withreference to FIG. 13. Moreover, although in an example in FIG. 13, acircuit diagram of the switch circuit 45A is illustrated, the switchcircuits 45B to 45D have the same configuration as well.

As illustrated in FIG. 13, the switch circuit 45A includes the levelshifter LSTP that is connected to gates of high breakdown voltage nchannel MOS transistors 218 to 223, and gates of transistors 218, 220,and 222, and the level shifter BLSTP that is connected to gates oftransistors 219, 221, and 223. The configuration of the switch circuit45A is the same as that of the switch circuit 41A in FIG. 10. Thetransistors 218 to 223 of the switch circuit 45A are equivalent to thetransistors 202 to 207 of the switch circuit 41A.

One end of the transistor 218 is connected to the transistors 220 and222, and the output terminal of the switch circuit 43A. The other end ofthe transistor 218 is connected to the wire GWL48. A gate of thetransistor 218 is connected to gates of the transistors 220 and 222, andthe output terminal of the level shifter LSTP into which a controlsignal S_SW11 is input.

The other end of the transistor 220 is connected to the wire GWL49.

The other end of the transistor 222 is connected to the wire GWL50.

One end of the transistor 219 is connected to the output terminal 41A<0>of the switch circuit 41A, and the other end is connected to the otherend of the transistor 218 and the wire GWL48. A gate of the transistor219 is connected to gates of the transistors 221 and 223 and the outputterminal of the level shifter BLSTP into which a control signal S_SW12is input.

One end of the transistor 221 is connected to the output terminal 41A<1>of the switch circuit 41A, and the other end is connected to the otherend of the transistor 220 and the wire GWL49.

One end of the transistor 223 is connected to the output terminal 41A<2>of the switch circuit 41A, and the other end is connected to the otherend of the transistor 222 and the wire GWL50.

If the control signal S_SW11 is at the “H” level, the switch circuit 45Acauses the transistors 218, 220, and 222 to be in the ON state, andoutputs the output voltage (any one of the voltage of the wire CGU(D),the voltage of the wire CGU(S), and the voltage of the wire UCG) of theswitch circuit 43A to the wires GWL48 to GWL50. On the other hand, ifthe control signal S_SW12 is at the “H” level, the switch circuit 45Acauses the transistors 219, 221, and 223 to be in the ON state, andoutputs the output voltage (the voltage of the wire CG<2:0>, the voltageof the wire CGU(D), the voltage of the wire CGU(S)) of the switchcircuit 41A to the wires GWL48 to GWL50.

1.8 Configuration of the SG Selection Circuit

Next, a configuration of the SG selection circuit 15A is described withreference to FIG. 14. Although FIG. 14 illustrates the SG selectioncircuit 15A, the SG selection circuit 15B has the same configuration aswell.

As illustrated in FIG. 14, the SG selection circuit 15A generallyincludes a selection gate selection circuit 70C0 that corresponds to thechunk CNK0, a selection gate selection circuit 70C2 that corresponds tothe chunk CNK2, and a string selection circuit 71A that corresponds tothe chunks CNK0 and CNK2. Moreover, although in an example in FIG. 14,the configuration of the selection gate selection circuit 70C2 isomitted for brevity, the configuration of the selection gate selectioncircuit 70C2 is the same as that of the selection gate selection circuit70C0.

Based on the control signal S_SW that is transmitted from the first rowcontrol circuit 25A1, the string selection circuit 71A outputs thevoltages of the wires SGS_SEL, SGS_USEL, SGD_SEL, and SGD_USEL to theselection gate selection circuits 70C0 and 70C2. The string selectioncircuit 71A includes an SGS selection unit 74A that corresponds to theselection gate line SGS, and an SGD selection unit 75A that correspondsto the selection gate line SGD.

The SGS selection unit 74A outputs any one of the voltage of the wireSGS_SEL and the voltage of the wire SGS_USEL to the selection gateselection circuits 70C0 and 70C2. The SGS selection unit 74A includes aswitch circuit 46 (46A TO 46D).

Switch circuits 46A to 46D correspond to the wires GSGS0 to GSGS3,respectively, in the chunk CNK0 and CNK2. The switch circuits 46A to 46Dhave the same configuration as the switch circuit 40 in FIG. 9. Each ofthe switch circuits 46A to 46D includes two input terminals and oneoutput terminal. One input terminal of each of the switch circuits 46Ato 46D is connected in common to the wire SGS_SEL, and the other inputterminal is connected in common to the wire SGS_USEL. Furthermore,output terminals of the switch circuits 46A to 46D are connected toinput terminals, respectively, of switch circuits 48A to 48D of theselection gate selection circuits 70C0 and 70C2.

For example, if the string unit SU0 in any block BLK that is included inthe chunk CNK0 or CNK2 is selected, the switch circuit 46A outputs thevoltage of the wire SGS_SEL to the switch circuit 48A of a GSGSselection unit 72C0. On the other hand, the switch circuits 46B to 46Doutput the voltage of the wire SGS_USEL to switch circuits 48B to 48D.The same is true also for a case where the string units SU1 to SU3 areselected.

The SGD selection unit 75A outputs any one of the voltage of the wireSGD_SEL and the voltage of the wire SGD_USEL to the selection gateselection circuits 70C0 and 70C2. The SGD selection unit 75A includes aswitch circuit 47 (47A to 47D).

Switch circuits 47A to 47D correspond to the wires GSGD0 to GSGD3,respectively, in the chunks CNK0 and CNK2. The switch circuits 46A to46D have the same configuration as the switch circuit 40 in FIG. 9. Eachof the switch circuits 46A to 46D includes two input terminals and oneoutput terminal. One input terminal of each of the switch circuits 47Ato 47D is connected in common to the wire SGD_SEL, and the other inputterminal is connected in common to the wire SGD_USEL. Furthermore,output terminals of the switch circuits 47A to 47D are connected toinput terminals, respectively, of switch circuits 49A to 49D of theselection gate selection circuits 70C0 and 70C2.

For example, if the string unit SU0 in any block BLK that is included inthe chunk CNK0 or CNK2 is selected, the switch circuit 47A outputs thevoltage of the wire SGD_SEL to the switch circuit 49A of a GSGDselection unit 73C0. On the other hand, the switch circuits 47B to 47Doutputs the voltage of the wire SGS_USEL to switch circuits 49B to 49D.The same is true also for a case where the string units SU1 to SU3 areselected.

Based on the control signal S_SW that is transmitted from the first rowcontrol circuit 25A1, the selection gate selection circuit 70C0 (and70C2) outputs voltage of the wire USG or an output voltage of the stringselection circuit 71A to the wires GSGS0 to GSGS3 and GSGD0 to GSGD3.The selection gate selection circuit 70C0 (and 70C2) includes the GSGSselection unit 72C0 that corresponds to the wires GSGS0 to GSGS3, andthe GSGD selection unit 73C0 that corresponds to the wires GSGD0 toGSGD3.

The GSGS selection unit 72C0 outputs any one of the voltage of the wireUSG and an output voltage of the SGS selection unit 74A to the wiresGSGS0 to GSGS3. The GSGS selection unit 72C0 includes a switch circuit48 (48A to 48D).

Switch circuits 48A to 48D correspond to the wires GSGS0 to GSGS3,respectively, in the chunk CNK0. The switch circuits 48A to 48D have thesame configuration as the switch circuit 40 in FIG. 9. Each of theswitch circuits 48A to 48D includes two input terminals and one outputterminal. One input terminal of each of the switch circuits 48A to 48Dis connected in common to the wire USG, and the other input terminal isconnected to each of the output terminals of the switch circuits 46A to46D. Furthermore, the output terminal of each of the switch circuits 48Ato 48D is connected to each of the wires GSGS0 to GSGS3.

For example, if the chunk CNK0 is selected, the switch circuits 48A to48D output output voltages of the switch circuits 46A to 46D to thewires GSGS0 to GSGS3, respectively. On the other hand, if the chunk CNK0is non-selected, the switch circuits 48A to 48D output the voltage ofthe wire USG to the wires GSGS0 to GSGS3, respectively.

The GSGD selection unit 73C0 outputs any one of the voltage of the wireUSG and an output voltage of the SGD selection unit 75A to the wiresGSGD0 to GSGD3. The GSGD selection unit 73C0 includes a switch circuit49 (49A to 49D).

The switch circuits 49A to 49D correspond to the wires GSGD0 to GSGD3,respectively, in the chunk CNK0. The switch circuits 49A to 49D have thesame configuration as the switch circuit 40 in FIG. 9. Each of theswitch circuits 49A to 49D includes two input terminals and one outputterminal. One input terminal of each of the switch circuits 49A to 49Dis connected in common to the wire USG, and the other input terminal isconnected to each of the output terminals of the switch circuits 47A to47D. Furthermore, the output terminal of each of the switch circuits 49Ato 49D is connected to each of the wires GSGD0 to GSGD3.

For example, if the chunk CNK0 is selected, the switch circuits 49A to49D output output voltages of the switch circuits 47A to 47D to thewires GSGD0 to GSGD3, respectively. On the other hand, if the chunk CNK0is non-selected, the switch circuits 49A to 49D output the voltage ofthe wire USG to the wires GSGD0 to GSGD3, respectively.

1.9 Specific Example of a Word Line Connection Operation in the WritingOperation

Next, a specific example of a WL connection operation in the writingoperation is described. The same WL connection operation is alsoperformed in the reading operation.

1.9.1 Specific Example of the Zone Selection

First, a specific example of the zone selection is described withreference to FIG. 15. Moreover, in the example of FIG. 15, the zone Znthat corresponds to the word lines WL0 to WL23 is illustrated forbrevity.

A word line WL number along the horizontal axis in FIG. 15 indicates theselected word line WL, and a word line WL number along the vertical axisindicates allocation of zone selection that corresponds to the word lineWL. Because the selection zone Zn is suitably switched according to theselected word line WL, the width of the zone Zn that is indicated alongthe horizontal axis corresponds to the selected word line WL by whichthe zone Zn is selected. Then, numbers from 0 to 11, which are writtenalong the vertical side of a rectangular frame that indicates the zoneZn, indicate the wire CG<11:0> that is connected. Furthermore, areference character N indicates a place where the number of the wordline WL along the horizontal axis and the number of the word line WLalong vertical axis are the same.

As illustrated in FIG. 15, each zone Zn is provided corresponding to theword line WL. For example, the word lines WL0 to WL2 are included in thezone Zn0. If any one of the word lines WL0 to WL5 is selected, the zoneZn0 is selected. Then, if the zone Zn0 is selected, the word line WL0 toWL2 are connected to the wires CG<0> to CG<2>, respectively.

For example, in the writing operation, if the word line WL10 in theblock BLK0 that is included in the chunk CNK0 within the plane PLN0 isselected, the corresponding first row control circuit 25A1 selects thezones Zn2 to Zn5 based on a table in FIG. 15. Then, in the first rowselection circuit 12A, the word lines WL6 to WL17 in the block BLK0 areconnected to the wires CG<6> to CG<11> and CG<0> to CG<5>, respectively,through the row decoder 13C0 and the WL selection circuit 14A. In thesame manner, the word line WL0 to WL5 in block BLK0 are connected to thewire CGU(S), and the word lines WL18 to WL95 are connected to the wireCGU(D). At this time, the program voltage VPGM is applied to a wireCG<10> that corresponds to a selected word line WL10.

1.9.2 Specific Example of Operation of the WL Selection Circuit

Next, to describe operation of the WL selection circuit 14A in detail, acase where the word line WL10 in the block BLK0 that is included in thechunk CNK0 within the plane PLN0 is selected is given as an example.

Because the word line WL10 is included in the lower layer WL group, thefirst row control circuit 25A1 controls the zone selection circuit 34Abased on information of the zones Zn0 to Zn15 that correspond to thelower layer WL group. In the zone selection circuit 34A, the switchcircuit 41 that corresponds to the selected zones Zn2 to Zn5 outputs thevoltage of the wire CG<11:0> to the lower layer WL selection unit 37 andthe upper layer WL selection unit 38 in each block BLK. Morespecifically, the switch circuit 41C of the zone selection unit 39A thatcorresponds to the zone Zn2 outputs a voltage of the wire CG<8:6>. Theswitch circuit 41D of the zone selection unit 39A that correspond tozone Zn3 outputs a voltage of the wire CG<11:9>. The switch circuit 41Aof the zone selection unit 39B that corresponds to zone Zn4 outputs thevoltage of the wire CG<2:0>. The switch circuit 41B of the zoneselection unit 39B that corresponds to zone Zn5 outputs a voltage of thewire CG<5:3>. Furthermore, the switch circuits 41A and 41B of the zoneselection unit 39A that correspond to the zones Zn0 and Zn1 output thevoltage of the wire CGU(S) that is output from the switch circuit 40, tothe lower layer WL selection unit 37 and the upper layer WL selectionunit 38 in each block BLK. Other switch circuits 41 that correspond tothe zones Zn6 to Zn 15 output the voltage of the wire CGU(D) that isoutput from the switch circuit 40, to the lower layer WL selection unit37 and the upper layer WL selection unit 38 in each block BLK.

In the chunk selection unit 36, the switch circuit 43 that correspondsto the selected block BLK0 outputs the voltage (the voltage of the wireCGU(D) in the present example) of the wire CGU(D) or the wire CGU(S), tothe lower layer WL selection unit 37 and the upper layer WL selectionunit 38. The switch circuit 43 that corresponds to a non-selected blockBLK outputs the voltage of the wire UCG to the lower layer WL selectionunit 37 and the upper layer WL selection unit 38.

In the lower layer WL selection unit 37, the switch circuit 44 outputsan output voltage of the switch circuit 41. That is, the voltage of thewire CGU(S) is applied to the wires GWL0 to GWL5, and voltages of thewires CG<6> to CG<11> and CG<0> to CG<5> are applied to the wires GWL6to GWL17, respectively. Furthermore, the voltage of the wire CGU(D) isapplied to the wires GWL18 to GWL47.

In the upper layer WL selection unit 38, the switch circuit 45 outputsan output voltage of the switch circuit 43. That is, the voltage of thewire CGU(D) is applied to the wires GWL48 to GWL95.

1.9.3 Specific Example of Operation of the Row Decoder

Next, to describe operation of the row decoder 13C0 in detail, a casewhere the word line WL10 in the block BLK0 that is included in the chunkCNK0 within the plane PLN0 is selected is given as an example.

In the row decoder 13C0, as a result of decoding the address informationADD, the block decoder 60B0 causes the corresponding transistor 400 tobe in the ON state. Accordingly, the wires GWL0 to GWL95 areelectrically connected to the word line WL0 to WL95 in the block BLK0,respectively.

1.10 Effect According to the Present Embodiment

The semiconductor memory device according to the present embodiment cansuppress an increase in a chip area. The present effect will bespecifically described.

As miniaturization and multi-leveling advance in a NAND flash memory,the number of different types of voltages that are required increase.For example, a focus on the writing operation leads to application ofmany types of voltages to the non-selected word line WL. Particularly,in order to suppress erroneous writing and improve reliability of thewriting operation, it is necessary to apply a suitable voltage to eachof the neighboring word lines (for example, something like WL (i−4) toWL (i+4)) that include a selected word line WLi. The same is true alsofor the case of the reading operation. For this reason, a CG driversupplies a voltage necessary for each of these word lines WL through aplurality of wires CG.

The word line WL that is connected to the CG driver (that is, the wireCG) needs to be switched according to the selected word line WL. Forthis purpose, there is a method in which the word line WL is dividedinto a plurality of zones Zn and the word line WL that is connected tothe CG driver is selected by making a selection from among the pluralityof zones Zn. In this case, a zone selection circuit is needed inaccordance with each zone Zn in a zone selection circuit. As the totalnumber of word lines WL increases with large-scale integration, thetotal number of zones Zn increase. That is, the number of necessaryswitch circuits increases as well. For example, it is assumed that a setof three word lines WL is one zone Zn. Then, if the total number of wordlines WL is 12, the total number of zones Zn is 4, and if the totalnumber of word lines WL is 96, the total number of zones Zn is 32.Therefore, 32 switch circuits are necessary. For this reason, there is atendency for a circuit area of the zone selection circuit to increasewith large-scale integration.

In contrast, in a configuration according to the present embodiment, aWL selection circuit includes a chunk/zone selection circuit, a lowerlayer WL selection circuit, and an upper layer WL selection circuit.Accordingly, one zone selection unit 39 corresponds to both of a lowerlayer WL group and an upper layer WL group. That is, with one switchcircuit 41, one zone Zn that is included in the lower layer WL group canbe selected, and one zone Zn that is included in the upper layer WLgroup can be selected. Because one switch circuit 41 can correspond tothe two zones, an increase in the number of switch circuits 41 thataccompanies an increase in the number of zones Zn, that is, an increasein the circuit area of the zone selection circuit can be suppressed.Consequently, the increase in the chip area that accompanies large-scaleintegration can be suppressed.

Moreover, according to the present embodiment, the word lines WL aredivided into two groups, that is, the upper layer WL group and the lowerlayer WL group, but may be divided into three or more groups. In thiscase, because one switch circuit 41 can correspond to three or morezones, the increase in the chip area can be suppressed even more.

Additionally, because an increase in the number of switch circuits 41can be suppressed, the inclusion in the switch circuit 41 is possible.An increase in the number of switch elements (transistors) and anincrease in the number of level shifters LSTP and BLSTP can besuppressed. In addition, an increase in the number of level shiftersBLSTP, each of which includes a comparatively large circuit area thatcorresponds to a high breakdown voltage, can be suppressed, and thus theincrease in the chip area can be suppressed.

Additionally, in the configuration according to the present embodiment,because the increase in the number of switch circuits 41 can besuppressed, the number of switch circuits 40 that are connected to theswitch circuits 41 can be decreased. Consequently, the increase in thechip area can be suppressed.

Additionally, in the configuration according to the present embodiment,one chunk selection unit 36 can correspond to both of the lower layer WLgroup and the upper layer WL group. Consequently, in the same manner asin the zone selection unit 39, an increase in the number of chunkselection units 36 can be suppressed. Consequently, the increase in thechip area can be suppressed.

2. Second Embodiment

Next, a second embodiment is described. The second embodiment relates tothe row driver control circuit 23 and the row driver 24 that aredescribed according to the first embodiment. Moreover, according to thepresent embodiment, the WL selection circuits 14A and 14B may have aconfiguration different from the configuration according to the firstembodiment. For example, one switch circuit 41 may be providedcorresponding to one zone Zn. Only points that are different in thepresent embodiment from the first embodiment will be described below.

2. 1 Configuration of the Row Driver Control Circuit

First, a configuration of the row driver control circuit 23 is describedwith reference to FIG. 16.

As illustrated in FIG. 16, the row driver control circuit 23 includes anSDRV control circuit 311 and a CGFORK control circuit 312.

The SDRV control circuit 311 controls an output voltage and an outputtiming of a selection driver 301 within the row driver 24, which will bedescribed below.

The CGFORK control circuit 312 controls a CG selection circuit 302within the row driver 24, which will be described below. Morespecifically, for example, based on the CGFORK control circuit 312 andthe address information ADD, connections to wires LN, LNM1 to LNM5, LNP1to LNP5, and LN6, and a wire <11:0> are controlled.

2.2 Configuration of the Row Driver

Next, a configuration of the row driver 24 is described with referenceto FIG. 16. Moreover, the UCG driver 52, the SGD_SEL driver 53, theSGD_USEL driver 54, the SGS_SEL driver 55, the SGS_USEL driver 56, andthe USG driver 57 are as described with reference to FIG. 1 according tothe first embodiment, and thus descriptions thereof are omitted in thepresent embodiment.

As illustrated in FIG. 16, the CG driver 50 includes the selectiondriver 301 and the CG selection circuit 302.

The selection driver 301 outputs an output voltage of the voltagegeneration circuit 22 or the CGU driver 51 to a CG selection circuitthrough the wires LN, LNM1 to LNM5, LNP1 to LNP5, and LN6. The wires LN,LNM1 to LNM5, LNP1 to LNP5, and LN6, are hereinafter generally referredto as a wire L. The selection driver 301 includes 12 dedicated drivers[N_D], [N−1_D], [N−2_D], [N−3_D], [N−4_D], [N−5_D], [N+1_D], [N+2_D],[N+3_D], [N+4_D], [N+5_D], and [N±6_D], which correspond to 12 wiresCG<11:0>. The dedicated drivers [N_D], [N−1_D], [N−2_D], [N−3_D],[N−4_D], [N−5_D], [N+1_D], [N+2_D], [N+3_D], [N+4_D], [N+5_D], and[N±6_D] are hereinafter generally referred to as a dedicated driver [D].

The dedicated driver [N_D] outputs a voltage which is to be applied tothe selected word line WLi, to the CG selection circuit 302 through thewire LN. For example, the dedicated driver [N_D] outputs the programvoltage VPGM or a reading voltage VCGRV that is supplied from thevoltage generation circuit 22.

The dedicated driver [N−1_D] outputs a voltage which is to be applied toa non-selected word line WL (i−1), to the CG selection circuit 302through the wire LNM1. Moreover, because the dedicated driver [N−1_D]does not output the program voltage VPGM that is to be applied to theselected word line WLi, the dedicated driver [N−1_D] does not have thehigh breakdown voltage transistor and the level shifter BLSTP that has alarge size transistor to withstand the program voltage VPGM.

In the same manner as in the dedicated driver [N−1_D], the dedicateddrivers [N−2_D], [N−3_D], [N−4_D], [N−5_D], [N+1_D], [N+2_D], [N+3_D],[N+4_D], [N+5_D], and [N±6_D] are drivers that output voltages that areapplied to the non-selected word lines WL (i−2), WL(i−3), WL(i−4),WL(i−5), WL(i+1), WL(i+2), WL(i+3), WL(i+4), WL(i+5), and WL(i±6), tothe CG selection circuit 302, through the wires LNM2 to LNM5, LNP1 toLNP5, and LN6, respectively. In the same manner as in the dedicateddriver [N−1_D], the dedicated drivers [N−2_D], [N−3_D], [N−4_D],[N−5_D], [N+1_D], [N+2_D], [N+3_D], [N+4_D], [N+5_D], and [N±6_D] do notinclude the high breakdown voltage transistor and the level shifterBLSTP that has a large size transistor to withstand the program voltageVPGM.

The CG selection circuit 302 connects the wires LN, LNM1 to LNM5, LNP1to LNP5, and LN6 to any one of the 12 wires that are collectivelyreferred to as the wire CG<11:0>.

The CGU driver 51 includes a CGUD driver 303 and a CGUS driver 304.Moreover, the CGU driver 51 may include three or more driver circuits.For example, the CGUD driver 303 may further include two driver circuits(CGU0 and CUG1), and the CGUD driver 303 may further include two drivercircuits (CGU2 and CUG3). An arbitrary configuration is possibleaccording to a type of voltage that is output by the CGU driver 51.

For example, in the writing operation, the CGUD driver 303 outputs avoltage that is to be applied to the non-selected word line WL which ispositioned on a layer over a target block BLK, to the CG driver 50 andthe planes PLN0 and PLN1 through the wire CGU(D).

For example, in the writing operation, the CGUD driver 303 outputs avoltage that is to be applied to the non-selected word line WL which ispositioned on a layer under the target block BLK, to the CG driver 50and the planes PLN0 and PLN1 through the wire CGU(S).

2.2 Configuration of the Selection Driver

Next, a configuration of the selection driver 301 is described.

2.2.1 Specific Example of a Configuration of the Selection Driver.

First, a specific configuration of the selection driver 301 is describedwith reference to FIG. 17.

As illustrated in FIG. 17, the dedicated driver [N_D], for example,includes four input terminals and one output terminal. Each of the fourinput terminals of the dedicated driver [N_D] is connected to thevoltage generation circuit 22. The output terminal of the dedicateddriver [N_D] is connected to the wire LN. The voltage generation circuit22 is able to supply four types of voltages (one voltage is the programvoltage VPGM) to the dedicated driver [N_D]. The dedicated driver [N_D]outputs any one of the four input voltages to the wire LN.

The dedicated driver [N+1_D], for example, includes three inputterminals and one output terminal. The three input terminals of thededicated driver [N+1_D] are connected to the voltage generation circuit22, the CGUD driver 303, and the CGUS driver 304, respectively. Each ofthe CGUD driver 303 and the CGUS driver 304 is connected in common to adifferent dedicated driver [D] except for the dedicated drive [N_D]. Thededicated driver [N+1_D] outputs any one of the three input voltages tothe wire LNP1.

Each of the dedicated drivers [N+2_D] and [N+3_D], for example, includesthree input terminals and one output terminal. The three input terminalsof each of the dedicated drivers [N+2_D] and [N+3_D] are connected incommon to the voltage generation circuit 22, the CGUD driver 303, andthe CGUS driver 304, respectively. The dedicated drivers [N+2_D] and[N+3_D] output any of the three input voltages to the wires LNP2 andLNP3, respectively.

Each of the dedicated drivers [N+4_D] and [N+5_D], for example, includesthree input terminals and one output terminal. The three input terminalsof each of the dedicated drivers [N+4_D] and [N+5_D] are connected incommon to the voltage generation circuit 22, the CGUD driver 303, andthe CGUS driver 304, respectively. The dedicated drivers [N+4_D] and[N+5_D] output any of the three input voltages to the wires LNP4 andLNP5, respectively.

The dedicated driver [N−1_D], for example, includes three inputterminals and one output terminal. The three input terminals of thededicated driver [N−1_D] are connected to the voltage generation circuit22, the CGUD driver 303, and the CGUS driver 304, respectively. Thededicated driver [N−1_D] outputs any one of the three input voltages tothe wire LNM1.

Each of the dedicated drivers [N−2_D] and [N−3_D], for example, includesthree input terminals and one output terminal. The three input terminalsof each of the dedicated drivers [N−2_D] and [N−3_D] are connected incommon to the voltage generation circuit 22, the CGUD driver 303, andthe CGUS driver 304, respectively. The dedicated drivers [N−2_D] and[N−3_D] output any of the three input voltages to the wires LNM2 andLNM3, respectively.

Each of the dedicated drivers [N−4_D], [N−5_D], and [N±6_D], forexample, includes three input terminals and one output terminal. Thethree input terminals of each of the dedicated drivers [N−4_D], [N−5_D],and [N±6_D] are connected in common to the voltage generation circuit22, the CGUD driver 303, and the CGUS driver 304, respectively. Thededicated drivers [N−4_D], [N−5_D], and [N±6_D] output any of the threeinput voltages to the wires LNM4, LNM5, and LN6, respectively.

Moreover, a configuration of the selection driver 301 is not limited tothis. For each dedicated driver [D] within the selection driver 301, thenumber of input terminals and the connection to the voltage generationcircuit 22 or the CGU driver 51 can be arbitrarily configured accordingto a necessary voltage. For example, each dedicated driver [D] withinthe selection driver 301 may be connected to the voltage generationcircuit 22 through three different wires so that three types of voltagesare individually supplied from the voltage generation circuit 22, andmay not be connected to the CGU driver 51.

2.2.2 Configuration of the Dedicated Driver [N_D]

Next, as one specific example of the dedicated driver [D], aconfiguration of the dedicated driver [N_D] is described with referenceto FIG. 18. In an example in FIG. 18, a case is described in which fourvoltages are supplied from the voltage generation circuit 22, but it ispossible that the number of input voltages (input terminals) and acombination of input voltages are arbitrarily configured.

As illustrated in FIG. 18, the dedicated driver [N_D] includes the levelshifters LSTP that are respectively connected to gates of high breakdownvoltage n channel MOS transistors 231 to 234, and gates of transistors231 to 233, and the level shifter BLSTP that is connected to a gate of atransistor 234.

For example, the reading voltage VCGRV is applied to one end of thetransistor 231, and the other end is connected to the wire LN. A gate ofthe transistor 231 is connected to the output terminal of the levelshifter LSTP into which a control signal SCD1 that is transmitted fromthe SDRV control circuit 311 is input.

For example, a voltage VERA_WL that is to be applied to the word line WLfor erasing is applied to one end of the transistor 232, and the otherend is connected to the wire LN. A gate of the transistor 232 isconnected to the output terminal of the level shifter LSTP into which acontrol signal SCD2 that is transmitted from the SDRV control circuit311 is input.

For example, the voltage VPASS is applied to one end of the transistor233 during the writing operation, and a voltage VREAD is applied to theone end of the transistor 233 during the reading operation. The otherend of the transistor 233 is connected to the wire LN. A gate of thetransistor 233 is connected to the output terminal of the level shifterLSTP into which a control signal SCD3 that is transmitted from the SDRVcontrol circuit 311 is input.

The voltage VPGM is applied to one end of the transistor 234 during thewriting operation, and the other end is connected to the wire LN. A gateof the transistor 234 is connected to the output terminal of the levelshifter BLSTP into which a control signal SCD4 that is transmitted fromthe SDRV control circuit 311 is input. Because the voltage VPGM isapplied to the transistor 234, the transistor 234, for example, has sucha large transistor size that the transistor 234 can withstand a voltagehigher than withstand voltages of other transistors 231 to 233.

2.2.3 Configuration of the Dedicated Driver [N+1_D]

Next, as one specific example of the dedicated driver [D], aconfiguration of the dedicated driver [N+1_D] is described withreference to FIG. 19. Moreover, it is possible that the number of inputvoltages and a combination of input voltages are arbitrarily configured.

As illustrated in FIG. 19, the dedicated driver [N+1_D] includes thelevel shifters LSTP that are respectively connected to gates of highbreakdown voltage n channel MOS transistors 235 to 237, and gates oftransistors 235 to 237.

One end of the transistor 235 is connected to the wire CGU(D), and theother end is connected to the wire LNP1. A gate of the transistor 235 isconnected to the output terminal of the level shifter LSTP into which acontrol signal SCD5 that is transmitted from the SDRV control circuit311 is input.

One end of the transistor 236 is connected to the wire CGU(S), and theother end is connected to the wire LNP1. A gate of the transistor 236 isconnected to the output terminal of the level shifter LSTP into which acontrol signal SCD6 that is transmitted from the SDRV control circuit311 is input.

For example, the voltage VPASS1 is applied to one end of the transistor237 during the writing operation, and a voltage VREAD1 is applied to theone end of the transistor 237 during the reading operation. The otherend of the transistor 237 is connected to the wire LNP1. A gate of thetransistor 237 is connected to the output terminal of the level shifterLSTP into which a control signal SCD7 that is transmitted from the SDRVcontrol circuit 311 is input.

2.2.4 Configuration of the Dedicated Driver [N+3_D]

Next, as one specific example of the dedicated driver [D], aconfiguration of the dedicated driver [N+3_D] is described withreference to FIG. 20. Moreover, it is possible that the number of inputvoltages and a combination of input voltages are arbitrarily configured.

As illustrated in FIG. 20, the dedicated driver [N+3_D] includes thelevel shifters LSTP that are respectively connected to gates of highbreakdown voltage n channel MOS transistors 238 to 240, and gates oftransistors 238 to 240.

One end of the transistor 238 is connected to the wire CGU(D), and theother end is connected to the wire LNP3. A gate of the transistor 238 isconnected to the output terminal of the level shifter LSTP into which acontrol signal SCD8 that is transmitted from the SDRV control circuit311 is input.

One end of the transistor 239 is connected to the wire CGU(S), and theother end is connected to the wire LNP3. A gate of the transistor 239 isconnected to the output terminal of the level shifter LSTP into which acontrol signal SCD9 that is transmitted from the SDRV control circuit311 is input.

For example, the voltage VPASS3 is applied to one end of the transistor240 during the writing operation, and a voltage VREAD3 is applied to theone end of the transistor 240 during the reading operation. The otherend of the transistor 240 is connected to the wire LNP3. A gate of thetransistor 240 is connected to the output terminal of the level shifterLSTP into which a control signal SCD10 that is transmitted from the SDRVcontrol circuit 311 is input.

2.3 Configuration of the CG Selection Circuit

Next, a configuration of the CG selection circuit 302 is described withreference to FIG. 21.

As illustrated in FIG. 21, the CG selection circuit 302 includes 144transistors 250 that are arranged in a matrix layout, and 12 levelshifters BLSTP (BLSTP0 to BLSTP11) that correspond to the wire CG<11:0>.The level shifters BLSTP (BLSTP0 to BLSTP11) are controlled by theCGFORK control circuit 312.

In an example in FIG. 21, the dedicated drivers [N−3_D], [N−4_D],[N−5_D], [N±6_D], [N+5_D], [N+4_D], [N+3_D], [N+2_D], [N+1_D], [N_D],[N−1_D], and [N−2_D], which are in the selection driver 301, arearranged toward a fifth direction D5 parallel to the semiconductorsubstrate 100. Then, the wires LNM3 to LNM5, LP6, LNP5 to LNP1, LN,LNM1, and LNM2 are arranged in parallel along a fourth direction D4parallel to the semiconductor substrate 100. Then, the wire CG<11:0> ispositioned in parallel along the fifth direction D5 so as to intersectthese wires, and output wires for the level shifters BLSTP0 to BLSTP11are arranged along a sixth direction parallel to the semiconductorsubstrate 100 so as to intersect the wire L (LN, LNP1 to LNP5, LNM1 toLNM5, and LN6) and the wire CG<11:0>. Moreover, it is possible that anarrangement of the dedicated drivers [N_D], [N−1_D], [N−2_D], [N−3_D],[N−4_D], [N−5_D], [N+1_D], [N+2_D], [N+3_D], [N+4_D], [N+5_D], and[N±6_D] is arbitrarily configured.

Each the transistor 250 is positioned at a point at which these wiresintersect. One end of the transistor 250 is connected to any one of the12 wires that are collectively referred to as the wire CG<11:0>, theother end is connected to the wire L, and a gate is connected to theoutput wire for any one of the level shifters BLSTP0 to BLSTP11. Thatis, if a “H”-level voltage is applied to the level shifter BLSTP, thetransistor 250 enters into the ON state, and connects the wire L and thewire CG to each other.

In FIG. 22, relationships between the output wires for the level shifterBLSTP0 to BLSTP11, each driver “D” within the selection driver, and thewire CG<11:0> are illustrated.

As illustrated in FIG. 22, for example, if the level shifter BLSTP0outputs the “H”-level voltage, the dedicated drivers [N−3_D], [N−4_D],[N−5_D], [N±6_D], [N+5_D], [N+4_D], [N+3_D], [N+2_D], [N+1_D], [N_D],[N−1_D], and [N−2_D] are connected to the wires CG<11> to CG<0>,respectively.

Furthermore, for example, if the level shifter BLSTP1 outputs the“H”-level voltage, the dedicated drivers [N−3_D], [N−4_D], [N−5_D],[N±6_D], [N+5_D], [N+4_D], [N+3_D], [N+2_D], [N+1_D], [N_D], [N−1_D],and [N−2_D] are connected to the wires CG<0>, CG<11> to CG<1>,respectively.

Even though other level shifters BLSTP1 to BLSTP11 output the “H”-levelvoltage, in the same manner, the dedicated drivers [N−3_D], [N−4_D],[N−5_D], [N±6_D], [N+5_D], [N+4_D], [N+3_D], [N+2_D], [N+1_D], [N_D],[N−1_D], and [N−2_D] are connected to any one of the 12 wires that arecollectively referred to as the wire CG<11:0>.

That is, by controlling the level shifters BLSTP1 to BLSTP11, forexample, the dedicated driver [N_D] that corresponds to the selectedword line WL can be connected to any one of the 12 wires that arecollectively referred to as the wire CG<11:0>.

2.4 Effect According to the Present Embodiment

The semiconductor memory device according to the present embodiment cansuppress the increase in the chip area. The present effect will bespecifically described.

For example, if voltages of 12 word lines WL that include the selectedword line WL are applied to any one of the 12 wires that arecollectively referred to as the CG<11:0>, it is necessary to switch avoltage that is to be applied to the wire CG<11:0>, according to theselected word line WL. For example, the CG driver needs to be configuredso that the program voltage VPGM can be applied to any one of the 12wires that are collectively referred to as the wire CG<11:0>. Therefore,if the 12 drivers are provided within the CG driver that corresponds tothe wire CG<11:0>, each driver needs to be able to correspond to allvoltages that are to be applied to the 12 word lines WL that include theselected word line WL. For this reason, in most cases, each driverincludes a number of switch circuits (transistors+LSTPs) that correspondto the voltage which is to be applied to the 12 word lines WL. Morespecifically, for example, during the writing, if it is necessary toapply eight types of voltages that include the program voltage VPGM,each driver is configured to include a minimum of eight switch circuitsthat include the switch circuit that correspond to the program voltageVPGM. A driver circuit scale of the driver having this configuration isenlarged according to a type of necessary voltage. Furthermore, becauseeach driver includes the switch circuit (the high breakdown voltagetransistor and the level shifter BLSTP that have large scales) thatcorresponds to the program voltage VPGM, the circuit scale thereof isfurther enlarged.

In contrast, in the configuration according to the present embodiment,the semiconductor memory device includes the row driver 24 that includesthe CG driver 50. The CG driver 50 includes the selection driver 301 andthe CG selection circuit 302. The selection driver 301, for example,includes 12 dedicated drivers that correspond to the word lines WL (i±6)which include the selected word line WLi. Furthermore, the CG selectioncircuit 302 can output an output voltage of each dedicated driver to anyone of the 12 wires that are collectively referred to as the wireCG<11:0>. Accordingly, since it is only necessary that the voltage thatis to be applied to the corresponding word line WL can be output in eachdedicated driver, the number of switch circuits within the dedicateddriver can be reduced. Consequently, even though the number of types ofvoltage that are necessary for miniaturization and multi-leveling isincreased, an increase in the number of switch circuits within eachdedicated driver can be suppressed. Therefore, the increase in the chiparea can be suppressed.

Furthermore, for example, it is only necessary that the switch circuitthat includes a large circuit area which corresponds to the programvoltage VPGM is included in the dedicated driver [N_D] that correspondsto the selected word line WLi, and it is not necessary that the switchcircuit is included in the dedicated driver that corresponds to othernon-selected word lines WL. Therefore, the number of switch circuitseach of which includes a large circuit area that corresponds to theprogram voltage VPGM, that is, the number of level shifters BLSTP can bereduced. Therefore, the increase in the chip area can be suppressed.

In the configuration according to the present embodiment, the row drivercontrol circuit 23 includes the SDRV control circuit 311 that controlsthe selection driver 301, and the CGFORK control circuit 312 thatcontrols the CG selection circuit 302. For example, based on aconfiguration value of the voltage that is to be applied to the wordline WL and output timing information, the SDRV control circuit 311controls the selection driver 301. Based on the address information ADD,the CGFORK control circuit 312 controls the CG selection circuit 302.Therefore, the row driver control circuit 23 does not need to generatethe control signal SCD that is obtained by combining the configurationvalue of the voltage that is to be applied to the word line WL, thetiming information of output and the address information ADD. Because ofthis, the circuit that generates the control signal SCD can besimplified. Therefore, an increase in the circuit area of the row drivercontrol circuit 23 can be suppressed, and the increase in the chip areacan be suppressed.

3. Modification Example and Others

A semiconductor memory device according to the embodiments describedabove includes: a memory string (e.g., memory string 16 in FIG. 3) thatincludes first to fourth memory cells (e.g., MT in FIG. 3) which areconnected in series to one another; first to fourth word lines (e.g., WLin FIG. 3) that are connected to gates of the first to fourth memorycells, respectively; a voltage generation circuit (e.g., voltagegeneration circuit 22 in FIG. 1) that generates a first voltage; a firstcircuit (e.g., zone selection circuit 34A in FIG. 6) that is able tooutput the first voltage to one of first and second wires; a secondcircuit (e.g., lower layer WL selection circuit 32C0 in FIG. 6) that isable to connect the first and second wires to the first and second wordlines, respectively; and a third circuit (e.g., upper layer WL selectioncircuit 33C0 in FIG. 6) that is able to connect the first and secondwires to the third and fourth word lines, respectively, to each other.

With application of the embodiments described above, a semiconductormemory device can be provided that is capable of suppressing theincrease in the chip area. Moreover, the embodiments described above arenot limiting, and various modifications to the embodiments are possible.

For example, one of the first and second embodiments may be applied tothe semiconductor memory device, and both of the first and secondembodiments may be applied to the semiconductor memory device.

Additionally, the embodiments described above can be applied not only toa three-dimensional stacked NAND flash memory that is different from theembodiment described above, but also to a plane (two-dimensional) NANDflash memory. Additionally, the embodiments described above are notlimited to the NAND flash memory, and can be applied also to asemiconductor memory device that applies a plurality of voltages to aplurality of word lines which are connected to a plurality of memorycells.

In the embodiments described above, the “connections” include a state inwhich a connection is indirectly made, for example, with involving anyof transistor and a resistor, and the like in between.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

Moreover, each embodiment may be as follows. For example, when thememory cell transistor MT is able to retain 2-bit (four values) data andany one of the four values is retained, a threshold level is changedfrom a low level to an E level (erasing level), a A level, a B level,and a C level, (1) in the reading operation, a voltage that is appliedto a word line which is selected for the reading operation at the Alevel, for example, falls within a range of from 0 V to 0.55 V. It isnot limited to this case, and such a voltage falls within any one of theranges of from 0.1 V to 0.24 V, from 0.21 V to 0.31 V, from 0.31 V to0.4 V, from 0.4 V to 0.5 V, and from 0.5 V to 0.55 V.

A voltage that is applied to the word line which is selected in aB-level reading operation, for example, falls within a range of from 1.5V to 2.3 V. It is not limited to this case, and the voltage may fallwithin any one of the ranges of from 1.65 V to 1.8 V, from 1.8 V to 1.95V, from 1.95 V to 2.1 V, and from 2.1 V to 2.3 V.

A voltage that is applied to the word line which is selected in aC-level reading operation, for example, falls within a range of from 3.0V to 4.0 V. It is not limited to this case, and the voltage may fallwithin any one of the ranges of from 3.0 V to 3.2 V, from 3.2 V to 3.4V, from 3.4 V to 3.5 V, from 3.5 V to 3.6 V, and from 3.6 V to 4.0 V.

Time (tR) for the reading operation, for example, may fall within anyone of the ranges of from 25 μs to 38 μs, from 38 μs to 70 μs, and from70 μs to 80 μs.

(2) The writing operation includes a program operation and averification operation as described above. In the writing operation, avoltage that is first applied to the word line which is selected whenthe program operation is performed, for example, falls within a range offrom 13.7 V to 14.3 V. It is not limited to this case, and for example,the voltage may fall within any one of the ranges of from 13.7 V to 14.0V and from 14.0 V to 14. 6 V.

A voltage that is first applied to the selected word line when thewriting is performed through an odd-numbered word line and a voltagethat is first applied to the selected word line when the writing isperformed through an even-numbered word line may be changed.

When an Incremental Step Pulse Program (ISPP) scheme is adopted for theprogram operation, for example, approximately 0.5 V is given as astep-up voltage.

A voltage that is applied to a non-selected word line, for example, mayfall within a range of from 6.0 V to 7.3 V. It is not limited to thiscase, and for example, the voltage may fall within a range of from 7.3 Vto 8.4 V, and may be equal to or less than 6.0 V.

A bus voltage that is applied may be changed depending on whether thenon-selected word line is an odd-numbered word line or an even-numberedword line.

Time (tProg) for the reading operation, for example, may fall within anyone of the ranges of from 1,700 μs to 1,800 μs, from 1,800 μs to 1,900μs, and from 1,900 μs to 2,000 μs.

(3) For the erasing operation, for example, a voltage that is firstapplied to a well which is formed on an upper portion of a semiconductorsubstrate and above which the above-described memory cells are arrangedmay fall within a range of from 12 V to 13.6 V. It is not limited tothis case, and for example, the voltage may fall within any one of theranges of from 13.6 V to 14.8 V, from 14.8 V to 19.0 V, from 19.0 to19.8 V, and from 19.8 V to 21 V.

Time (tErase) for the erasing operation, for example, may fall withinanyone of the ranges of from 3,000 μs to 4,000 μs, from 4,000 μs to5,000 μs, and from 4,000 μs to 9,000 μs.

(4) A structure of the memory cell includes an electric chargeaccumulation layer that is positioned, through a tunnel insulating filmwith a thickness of from 4 to 10 nm, on a semiconductor substrate(silicon substrate). The electric charge accumulation layer can have astructure in which an insulating film of SiN, SiON, or the like, whichis from 2 to 3 nm in thickness, and a film of polysilicon that is from 3to 8 nm in thickness are stacked. Furthermore, a metal such as Ru may beadded to the polysilicon. The electric charge accumulation layerincludes an insulating film thereon. The insulating film, for example,includes a silicon oxide film with a thickness of from 4 to 10 nm, whichis interposed between a lower layer High-k film with a thickness of from3 to 10 nm and an upper layer High-k film with a thickness of from 3 to10 nm. For the High-k film, HfO or the like is used. Furthermore, thethickness of the silicon oxide film can be greater than the thickness ofthe High-k film. A control electrode with a thickness of from 30 to 70nm is formed, through a material with a thickness of from 3 to 10 nm onthe insulating film. Such material is a film of metal oxide such as TaOor a film of metal nitride such as TaN. For the control electrode, W orthe like is used.

Furthermore, an air gap can be formed between memory cells.

1. A semiconductor memory device comprising: a memory string thatincludes a plurality of memory cells electrically connected in series,the memory cells including first to fourth memory cells; first to fourthword lines that are electrically connected to gates of the first tofourth memory cells, respectively; a voltage generation circuitconfigured to generate a first voltage; a first circuit configured tooutput the first voltage to one of first and second wires; a secondcircuit configured to connect the first and second wires to the firstand second word lines, respectively; and a third circuit configured toconnect the first and second wires to the third and fourth word lines,respectively.
 2. The device according to claim 1, wherein the pluralityof memory cells include N memory cells and the first and third memorycells are separated by (N/2−1) memory cells and the second and fourthmemory cells are separated by (N/2−1) memory cells.
 3. The deviceaccording to claim 1, wherein the first circuit outputs the firstvoltage to the first wire if one of the first and third memory cells isselected, and outputs the first voltage to the second wire if one of thesecond and fourth memory cells is selected.
 4. The device according toclaim 1, wherein the first memory cell is located above a substrate, thesecond memory cell above the first memory cell, the third memory cellabove the second memory cell, and the fourth memory cell above the thirdmemory cell.
 5. The device according to claim 4, further comprising: afifth word line connected to a gate of a fifth memory cell of theplurality of memory cells, wherein the fifth memory cell is between thesubstrate and the first memory cell; and a sixth word line connected toa gate of a sixth memory cell of the plurality of memory cells, whereinthe sixth memory cell is above the fourth memory cell, wherein thevoltage generation circuit is further configured to generate second andthird voltages; the first circuit is configured to output the second andthird voltages to third and fourth wires, respectively; and the secondcircuit connects the third wire to the fifth word line if one of thefirst and second memory cells is selected and the third circuit connectsthe fourth wire to the sixth word line if one of the third and fourthmemory cells is selected.
 6. The device according to claim 5, furthercomprising: a fourth circuit configured to output the second and thirdvoltages to fifth and sixth wires, respectively, wherein the secondcircuit connects the fifth wire to the fifth word line if one of thethird and fourth memory cells is selected and the third circuit connectsthe sixth wire to the sixth word line if one of the first and secondmemory cells is selected.
 7. The device according to claim 6, whereinthe fourth circuit is further configured to output a fourth voltage to aseventh wire, and the second circuit connects the seventh wire to eachof the first to sixth word lines if a selected memory cell is in a blockof memory cells that does not include the memory string.
 8. Asemiconductor memory device comprising: a memory string that includes aplurality of memory cells electrically connected in series, the memorycells including first to fourth memory cells; first to fourth word linesthat are electrically connected to gates of the first to fourth memorycells, respectively; a voltage generation circuit; a first drivercircuit configured to generate first and second voltages from a voltagesupplied by the voltage generation circuit; a second driver circuitconfigured to generate a third voltage from the voltage supplied by thevoltage generation circuit and the first and second voltages; a firstcircuit configured to output the third voltage to one of first andsecond wires; a second circuit configured to connect the first andsecond wires to the first and second word lines, respectively; and athird circuit configured to connect the first and second wires to thethird and fourth word lines, respectively.
 9. The device according toclaim 8, wherein the second driver circuit includes a first dedicateddriver circuit to generate the third voltage and a second dedicateddriver circuit to generate a fourth voltage, and the first circuit isfurther configured to output the fourth voltage to the other one of thefirst and second wires.
 10. The device according to claim 9, wherein thefirst circuit outputs the third voltage to the first wire and the fourthvoltage to the second wire if one of the first and third memory cells isselected, and outputs the third voltage to the second wire and thefourth voltage to the first wire if one of the second and fourth memorycells is selected.
 11. The device according to claim 8, wherein thefirst memory cell is located above a substrate, the second memory cellabove the first memory cell, the third memory cell above the secondmemory cell, and the fourth memory cell above the third memory cell. 12.The device according to claim 11, further comprising: a fifth word lineconnected to a gate of a fifth memory cell of the plurality of memorycells, wherein the fifth memory cell is between the substrate and thefirst memory cell; and a sixth word line connected to a gate of a sixthmemory cell of the plurality of memory cells, wherein the sixth memorycell is above the fourth memory cell, wherein the first circuit isfurther configured to output the first and second voltages to third andfourth wires, respectively; and the second circuit connects the thirdwire to the fifth word line if one of the first and second memory cellsis selected and the third circuit connects the fourth wire to the sixthword line if one of the third and fourth memory cells is selected. 13.The device according to claim 12, further comprising: a fourth circuitconfigured to output the first and second voltages to fifth and sixthwires, respectively, wherein the second circuit connects the fifth wireto the fifth word line if one of the third and fourth memory cells isselected and the third circuit connects the sixth wire to the sixth wordline if one of the first and second memory cells is selected.
 14. Thedevice according to claim 13, wherein the fourth circuit is furtherconfigured to output a fourth voltage to a seventh wire, and the secondcircuit connects the seventh wire to each of the first to sixth wordlines if a selected memory cell is in a block of memory cells that doesnot include the memory string.
 15. A method of controlling voltagesapplied to word lines of a semiconductor memory device during anoperation performed on a selected memory cell, wherein the semiconductormemory device includes a memory string that includes a plurality ofmemory cells electrically connected in series, the memory cellsincluding first to fourth memory cells, the gates of the first to fourthmemory cells being connected respectively to the first to fourth wordlines, said method comprising: generating a voltage; supplying thegenerated voltage to a first driver circuit to produce first and secondvoltages and to a second driver circuit to produce third and fourthvoltages, wherein the first driver circuit applies the first and secondvoltages to first and second wires, respectively, and the second drivercircuit applies the third and fourth voltages to third and fourth wires,respectively; connecting the first and second wires to the first andsecond word lines, respectively, and the third and fourth wires to thethird and fourth word lines, respectively, if the selected memory cellis one of the first and second memory cells; and connecting the firstand second wires to the third and fourth word lines, respectively, andthe third and fourth wires to the first and second word lines,respectively, if the selected memory cell is one of the third and fourthmemory cells.
 16. The method according to claim 15, wherein theplurality of memory cells include N memory cells and the first and thirdmemory cells are separated by (N/2−1) memory cells and the second andfourth memory cells are separated by (N/2−1) memory cells.
 17. Themethod according to claim 15, wherein the first memory cell is locatedabove a substrate, the second memory cell above the first memory cell,the third memory cell above the second memory cell, and the fourthmemory cell above the third memory cell.
 18. The method according toclaim 17, wherein the semiconductor memory device further comprises afifth word line connected to a gate of a fifth memory cell of theplurality of memory cells, wherein the fifth memory cell is between thesubstrate and the first memory cell, and a sixth word line connected toa gate of a sixth memory cell of the plurality of memory cells, whereinthe sixth memory cell is above the fourth memory cell, said methodfurther comprising: connecting the fourth wire to the sixth word line ifone of the first and second memory cells is the selected memory cell;and connecting the third wire to the fifth word line if one of the thirdand fourth memory cells is the selected memory cell.
 19. The methodaccording to claim 15, wherein the first driver circuit produces thefirst and second voltages based on the generated voltage and the thirdand fourth voltages.
 20. The method according to claim 15, furthercomprising: supplying the generated voltage to a third driver circuit toproduce a fifth voltage, wherein the third driver circuit applies thefifth voltage to a fifth wire; and connecting the fifth wire to each ofthe first to fourth word lines if the selected memory cell is in a blockof memory cells that does not include the memory string.